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Characterization of diamond films an...

Shiomi, Hiromu.

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Characterization of diamond films and their application for electrical devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Characterization of diamond films and their application for electrical devices./
作者:	Shiomi, Hiromu.
面頁冊數:	159 p.
附註:	Source: Dissertation Abstracts International, Volume: 54-09, Section: B, page: 4871.
Contained By:	Dissertation Abstracts International54-09B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9404017

Characterization of diamond films and their application for electrical devices.
Shiomi, Hiromu.

Characterization of diamond films and their application for electrical devices. - 159 p.

Source: Dissertation Abstracts International, Volume: 54-09, Section: B, page: 4871.

Thesis (Ph.D.)--Stanford University, 1993.

Diamond is considered a potentially useful material for high-frequency and high-power devices that operate under harsh conditions, because high-quality diamond has a high band gap, high breakdown voltage, high electron saturation velocity and a low dielectric constant. We therefore characterized diamond films in terms of morphology, optical properties and electrical properties for electrical device application.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Characterization of diamond films and their application for electrical devices.
LDR:03265nmm 2200313 4500 001 1821714
005 20061114122253.5
008 130610s1993 eng d
035 $a (UnM)AAI9404017
035 $a AAI9404017
040 $a UnM $c UnM
100 1 $a Shiomi, Hiromu. $3 1910880
245 1 0 $a Characterization of diamond films and their application for electrical devices.
300 $a 159 p.
500 $a Source: Dissertation Abstracts International, Volume: 54-09, Section: B, page: 4871.
500 $a Adviser: Stig B. Hagstrom.
502 $a Thesis (Ph.D.)--Stanford University, 1993.
520 $a Diamond is considered a potentially useful material for high-frequency and high-power devices that operate under harsh conditions, because high-quality diamond has a high band gap, high breakdown voltage, high electron saturation velocity and a low dielectric constant. We therefore characterized diamond films in terms of morphology, optical properties and electrical properties for electrical device application.
520 $a For the morphological characterization, we used atomic force microscopy (AFM) to investigate diamond films grown by the microwave plasma CVD method. We found that epitaxial growth decreases the surface roughness on the (100) surface, while it increases the surface roughness on the (110) surface. Additionally, we found the (100) surface of boron-doped films to be atomically smooth. In order to theoretically investigate growth morphology, we undertook atomistic calculations to determine the surface energy, ledge energies and adsorption energies of carbon on the diamond surface. We used an empirical potential energy function for carbon recently developed and verified by Tersoff. We found both the macroscopic features (the evolution of the morphology of polycrystalline diamond) and the microscopic features (the predominance and the shape of ledges) of morphology consistent with the theoretical predictions.
520 $a For the optical characterization, we used Raman spectroscopy to study the boron doping effect. Our finding was that boron doping shifts the diamond phonon peak toward the lower energy side and creates three other different peaks in the low energy range. We attributed these peaks to electronic transitions of boron acceptors. For the electrical characterization, we conducted I-V, C-V and Hall effect measurements to determine the electrical properties of boron-doped diamond. We investigated metal-semiconductor junction properties and resistivities as a function of doping concentration, all of which are characteristics that must be known for the design of electrical devices.
520 $a We fabricated Schottky diodes and MESFETs with Al for Schottky contacts and Ti for ohmic contacts. Good rectifying properties were observed on the smooth epitaxial film grown on diamond (100). We observed basic transistor operation of the MESFETs, which indicates the feasibility of using this diamond for electrical devices.
590 $a School code: 0212.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Chemistry, Inorganic. $3 517253
690 $a 0794
690 $a 0544
690 $a 0488
710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 54-09B.
790 1 0 $a Hagstrom, Stig B., $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 1993
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9404017