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Controlled growth of semiconductor n...

Yan, Haoquan.

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Controlled growth of semiconductor nanostructures and their optical and electrical properties.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Controlled growth of semiconductor nanostructures and their optical and electrical properties./
作者:	Yan, Haoquan.
面頁冊數:	181 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4222.
Contained By:	Dissertation Abstracts International66-08B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187190
ISBN:	0542291703

Controlled growth of semiconductor nanostructures and their optical and electrical properties.
Yan, Haoquan.

Controlled growth of semiconductor nanostructures and their optical and electrical properties. - 181 p.

Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4222.

Thesis (Ph.D.)--University of California, Berkeley, 2005.

This Dissertation presents the experimental studies in rational synthesis of zinc oxide nanostructures and their unique optical and electrical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls including position, orientation, diameter and density control have been achieved. In addition, controlled growth of different morphologies of ZnO nano-structures, such as tetrapods, nanocombs, nanoribbons, etc., can be achieved by using different growth conditions.

ISBN: 0542291703Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Controlled growth of semiconductor nanostructures and their optical and electrical properties.
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245 1 0 $a Controlled growth of semiconductor nanostructures and their optical and electrical properties.
300 $a 181 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4222.
500 $a Chair: Peidong Yang.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2005.
520 $a This Dissertation presents the experimental studies in rational synthesis of zinc oxide nanostructures and their unique optical and electrical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls including position, orientation, diameter and density control have been achieved. In addition, controlled growth of different morphologies of ZnO nano-structures, such as tetrapods, nanocombs, nanoribbons, etc., can be achieved by using different growth conditions.
520 $a Temperature-dependent photoluminescence and power dependent emission has been examined on ZnO nanowires. Room temperature lasing action was observed when the excitation intensity exceeds a threshold (&sim;40kW/cm2). The observation of lasing action in these nanowires without any fabricated mirrors indicates these single-crystalline, well-facetted nanowires can function as self-contained optical resonance cavities. This argument is further supported by the near-field scanning optical microscopy (NSOM) studies on single nanowires. Furthermore, similar lasing behavior was also observed in other ZnO nanostructures, including nanoribbons, nanocombs and tetrapods. These room temperature nanolasers can potentially be used as light sources in nanoscale optical circuits.
520 $a Besides the room temperature lasing properties, the nonlinear optical response was also observed in the ZnO nanowires. Here, second- and third-harmonic generation (SHG, THG) are imaged on single zinc oxide (ZnO) nanowires using near-field scanning optical microscopy (NSOM). The absolute magnitudes of the two independent chi(2) elements of a single wire are determined, and the nanowire SHG and THG emission patterns as a function of incident polarization are attributed to the hexagonal nanowire geometry and chi (2) tensor symmetry.
520 $a Electrical properties of ZnO and GaN nanowires were extensively investigated to explore their applications in electrical devices, such as photodectors, chemical sensors, transistors, light emission diodes (LED), etc. Typically the as-made ZnO nanowires are n-type with carrier concentrations of 5.2 +/- 2.5 x 1017 cm-3. The average mobility (mu) value of the ZnO nanowires is 13 +/- 5 cm 2/V s, which is among the highest reported mobility values for ZnO devices. The GaN nanowires discussed here is synthesized by chemical vapor transport (CVT) method, which typically gives us the carrier concentrations in the range of 2.5 - 5.0 x 1019 cm-3 and electron mobilities that range from 10 - 35 cm2 /V s. These single crystalline and high performance nanowires have many device applications that have been explored in this work, such as ZnO nanowires based photodectors and chemical sensors, ZnO and GaN nanowire field effect transistors; and the novel LED displays by n-GaN nanowire/p-Si lines crossbar junctions arrays. These nanowire LED displays have very high resolution, which will have many promising applications in the near future.
590 $a School code: 0028.
650 4 $a Chemistry, Inorganic. $3 517253
690 $a 0488
710 2 0 $a University of California, Berkeley. $3 687832
773 0 $t Dissertation Abstracts International $g 66-08B.
790 1 0 $a Yang, Peidong, $e advisor
790 $a 0028
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187190