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Long cavity quantum dot laser diode ...

Shavitranuruk, K.

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Long cavity quantum dot laser diode and monolithic passively mode-locked operation.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Long cavity quantum dot laser diode and monolithic passively mode-locked operation./
作者:	Shavitranuruk, K.
面頁冊數:	83 p.
附註:	Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4317.
Contained By:	Dissertation Abstracts International71-07B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3415049
ISBN:	9781124092256

Long cavity quantum dot laser diode and monolithic passively mode-locked operation.
Shavitranuruk, K.

Long cavity quantum dot laser diode and monolithic passively mode-locked operation. - 83 p.

Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4317.

Thesis (Ph.D.)--University of Central Florida, 2010.

Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented.

ISBN: 9781124092256Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Long cavity quantum dot laser diode and monolithic passively mode-locked operation.
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245 1 0 $a Long cavity quantum dot laser diode and monolithic passively mode-locked operation.
300 $a 83 p.
500 $a Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4317.
500 $a Adviser: Dennis G. Deppe.
502 $a Thesis (Ph.D.)--University of Central Florida, 2010.
520 $a Advantage of the single QD active layer is its potential for very low threshold current density, which in turn can produce low internal optical loss. The low threshold current density and low internal loss thus enable a significant increase in laser diode cavity length. Because of the importance of the threshold current density in heatsinking, future technology of broad-area monolithic laser diodes can be implemented.
520 $a The dissertation describes the development and the unique characteristics of single QD active layer laser with long cavity. The data are presented on single layer QD laser diodes that reach threshold current densities values of 11.7 A/cm2 in a p-up mounted 2 cm long cavity and as low as 10 A/cm2, with CW output power of 2 W in a p-down mounted 1.6 cm long cavity. The 8.8 A/cm2 in a p-down mounted 2 cm long cavity is reported. To our knowledge the value 8.8 A/cm2 is the lowest threshold current density ever reported for a room temperature laser diode. These single layer QD laser diodes reach an internal loss of &sim;0.25 cm-1, which is also the lowest ever reported for a room temperature laser diode.
520 $a These unique characteristics of single layer QD and laser diode size are potentially promising for the monolithic mode-locked laser because of relatively high peak power with a low repetition rate that is on the order of a few GHz, which can be the novel device for external clocking in the optical interconnect applications. In this dissertation, the stable optical pulse train in a 40 microm wide stripe with a repetition rate of 3.75 GHz with 1.1 cm cavity length through the passive mode-locked onto the monolithic two-section device fabricated from this single layer QD laser is observed.
590 $a School code: 0705.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Solid State. $3 1669244
650 4 $a Physics, Optics. $3 1018756
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710 2 $a University of Central Florida. $3 1018467
773 0 $t Dissertation Abstracts International $g 71-07B.
790 1 0 $a Deppe, Dennis G., $e advisor
790 $a 0705
791 $a Ph.D.
792 $a 2010
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3415049