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Design, deposition, and characteriza...
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Liu, Jun.
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Design, deposition, and characterization of novel transparent oxide thin films for applications in organic photovoltaics and thin film transistors.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Design, deposition, and characterization of novel transparent oxide thin films for applications in organic photovoltaics and thin film transistors./
作者:
Liu, Jun.
面頁冊數:
163 p.
附註:
Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3052.
Contained By:
Dissertation Abstracts International71-05B.
標題:
Chemistry, Inorganic. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3402212
ISBN:
9781109742084
Design, deposition, and characterization of novel transparent oxide thin films for applications in organic photovoltaics and thin film transistors.
Liu, Jun.
Design, deposition, and characterization of novel transparent oxide thin films for applications in organic photovoltaics and thin film transistors.
- 163 p.
Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3052.
Thesis (Ph.D.)--Northwestern University, 2010.
Because of the modest conductivity of the widely-used Sn-doped In 2O3 (ITO) films and the soaring In price, transparent oxide conductor (TOC) films with greater conductivity and lower In content are highly desirable. In-doped CdO (CIO)/ITO bilayer TOC films are prepared by combining, in sequence, metal-organic chemical vapor deposition and ion-assisted deposition techniques. Integrating high CIO conductivity with favorable ITO work function and corrosion resistance, these CIO/ITO bilayer TOC films are investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices. While the bilayer anode OPVs of the current laboratory size (∼0.06 cm 2) exhibit performance comparable to those of commercial ITO-based control devices, TOC conductivity effect on large-area OPV performance is analyzed through a simulation model and the results reveal significant advantages of using the highly conductive bilayer TOC anodes for large-area OPV cells.
ISBN: 9781109742084Subjects--Topical Terms:
517253
Chemistry, Inorganic.
Design, deposition, and characterization of novel transparent oxide thin films for applications in organic photovoltaics and thin film transistors.
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Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3052.
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Thesis (Ph.D.)--Northwestern University, 2010.
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Because of the modest conductivity of the widely-used Sn-doped In 2O3 (ITO) films and the soaring In price, transparent oxide conductor (TOC) films with greater conductivity and lower In content are highly desirable. In-doped CdO (CIO)/ITO bilayer TOC films are prepared by combining, in sequence, metal-organic chemical vapor deposition and ion-assisted deposition techniques. Integrating high CIO conductivity with favorable ITO work function and corrosion resistance, these CIO/ITO bilayer TOC films are investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices. While the bilayer anode OPVs of the current laboratory size (∼0.06 cm 2) exhibit performance comparable to those of commercial ITO-based control devices, TOC conductivity effect on large-area OPV performance is analyzed through a simulation model and the results reveal significant advantages of using the highly conductive bilayer TOC anodes for large-area OPV cells.
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There has been increasing interest in transparent flexible thin film transistors (TF-TFTs) in the past few decades. To achieve high-performance low-operating-voltage TF-TFTs, it is essential to develop and integrate unconventional materials, and design corresponding low-temperature deposition processes. Zinc-Indium-Tin-Oxide (ZITO) films are first grown by pulsed-laser deposition (PLD) using a target with the composition of Zn0.33In1.40 Sn0.27O3. While increasing substrate temperature above 100°C can induce crystallinity, both amorphous ZITO (a-ZITO) TOC and transparent oxide semiconductor (TOS) films can be grown at room temperature by controlling the O2 partial pressure. SiO2-reinforced self-assembled nanodielectric (SR-SAND) is then developed to enhance SAND durability during PLD processes, enabling the combination of SR-SAND with a-ZITO TOS to afford fully transparent TFTs with a high field-effect mobility (muFE) of ∼140 cm2/V˙s at a low operating voltage of ∼1.0 V. Next, a novel concept of all-amorphous-oxide TF-TFTs using the a-ZITO TOS channel is demonstrated with an amorphous Ta2O 5/vapor-deposited SiO2 bilayer dielectric and a-ZITO TOC electrodes. These TF-TFTs composed exclusively of amorphous oxides exhibit great field-effect performance, good transparency, and excellent flexibility. Lastly, a high-performance a-ZITO TOS-based TF-TFT is realized using a high-capacitance vapor-deposited SAND (v-SAND) gate dielectric. A large muFE of ∼110 cm2/V˙s is achieved at an operating voltage of ∼1.0 V. While these TF-TFTs exhibit good visible transparency, bending tests reveal their great mechanical flexibility.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3402212
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