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Resistive switching in silicon oxide...

Yao, Jun.

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Resistive switching in silicon oxide-based systems.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Resistive switching in silicon oxide-based systems./
作者:	Yao, Jun.
面頁冊數:	50 p.
附註:	Source: Masters Abstracts International, Volume: 49-01, page: 0627.
Contained By:	Masters Abstracts International49-01.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1485984
ISBN:	9781124213088

Resistive switching in silicon oxide-based systems.
Yao, Jun.

Resistive switching in silicon oxide-based systems. - 50 p.

Source: Masters Abstracts International, Volume: 49-01, page: 0627.

Thesis (M.S.)--Rice University, 2010.

Voltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon. The switching site is further reduced in size by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the devices show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching. The switching is further explored in a vertical representation as potential candidate for high-density memory applications.

ISBN: 9781124213088Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Resistive switching in silicon oxide-based systems.
LDR:01892nam 2200277 4500 001 1396358
005 20110603090811.5
008 130515s2010 ||||||||||||||||| ||eng d
020 $a 9781124213088
035 $a (UMI)AAI1485984
035 $a AAI1485984
040 $a UMI $c UMI
100 1 $a Yao, Jun. $3 1675138
245 1 0 $a Resistive switching in silicon oxide-based systems.
300 $a 50 p.
500 $a Source: Masters Abstracts International, Volume: 49-01, page: 0627.
500 $a Adviser: Douglas Natelson.
502 $a Thesis (M.S.)--Rice University, 2010.
520 $a Voltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon. The switching site is further reduced in size by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the devices show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching. The switching is further explored in a vertical representation as potential candidate for high-density memory applications.
590 $a School code: 0187.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0544
690 $a 0794
710 2 $a Rice University. $3 960124
773 0 $t Masters Abstracts International $g 49-01.
790 1 0 $a Natelson, Douglas, $e advisor
790 $a 0187
791 $a M.S.
792 $a 2010
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1485984