語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
BSIM4 and MOSFET modeling for IC sim...
~
Liu, Weidong, (1965-{me_controlnum})
FindBook
Google Book
Amazon
博客來
BSIM4 and MOSFET modeling for IC simulation
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
BSIM4 and MOSFET modeling for IC simulation/ Weidong Liu, Chenming Hu.
作者:
Liu, Weidong,
其他作者:
Hu, Chenming.
出版者:
Singapore ;World Scientific Pub. Co., : c2011.,
面頁冊數:
xix, 414 p. :ill. (some col.)
標題:
Metal oxide semiconductor field-effect transistors - Mathematical models. -
電子資源:
http://www.worldscientific.com/worldscibooks/10.1142/6158#t=toc
ISBN:
9789812813992 (electronic bk.)
BSIM4 and MOSFET modeling for IC simulation
Liu, Weidong,1965-{me_controlnum}
BSIM4 and MOSFET modeling for IC simulation
[electronic resource] /Weidong Liu, Chenming Hu. - Singapore ;World Scientific Pub. Co.,c2011. - xix, 414 p. :ill. (some col.) - International series on advances in solid state electronics and technology. - International series on advances in solid state electronics and technology..
Includes bibliographical references and index.
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Electronic reproduction.
Singapore :
World Scientific Publishing Co.,
2011.
System requirements: Adobe Acrobat Reader.
ISBN: 9789812813992 (electronic bk.)Subjects--Topical Terms:
914001
Metal oxide semiconductor field-effect transistors
--Mathematical models.
LC Class. No.: TK7871.95
Dewey Class. No.: 621.3815284
BSIM4 and MOSFET modeling for IC simulation
LDR
:02136nmm a2200289 a 4500
001
1295180
003
WSP
005
20120210091247.0
006
m d
007
cr cuu|||uu|||
008
121114s2011 si a sb 001 0 eng d
020
$a
9789812813992 (electronic bk.)
020
$z
9812568638
020
$z
9789812568632
035
$a
00002582
040
$a
WSPC
$b
eng
$c
WSPC
050
4
$a
TK7871.95
082
0 4
$a
621.3815284
$2
22
100
1
$a
Liu, Weidong,
$d
1965-{me_controlnum}
$3
1573198
245
1 0
$a
BSIM4 and MOSFET modeling for IC simulation
$h
[electronic resource] /
$c
Weidong Liu, Chenming Hu.
260
$a
Singapore ;
$a
Hackensack, N.J. :
$b
World Scientific Pub. Co.,
$c
c2011.
300
$a
xix, 414 p. :
$b
ill. (some col.)
490
1
$a
International series on advances in solid state electronics and technology
504
$a
Includes bibliographical references and index.
520
$a
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
533
$a
Electronic reproduction.
$b
Singapore :
$c
World Scientific Publishing Co.,
$d
2011.
$n
System requirements: Adobe Acrobat Reader.
$n
Mode of access: World Wide Web.
$n
Available to subscribing institutions.
650
0
$a
Metal oxide semiconductor field-effect transistors
$x
Mathematical models.
$3
914001
700
1
$a
Hu, Chenming.
$3
867410
710
2
$a
World Scientific (Firm)
$3
560950
776
1
$z
9812568638
776
1
$z
9789812568632
830
0
$a
International series on advances in solid state electronics and technology.
$3
1573199
856
4 0
$u
http://www.worldscientific.com/worldscibooks/10.1142/6158#t=toc
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9144408
電子資源
11.線上閱覽_V
電子書
EB TK7871.95
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入