20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變...
李政逵

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  • 20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = = Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
  • Record Type: Language materials, printed : Monograph/item
    Title/Author: 20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = / 李政逵撰
    Reminder of title: Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
    remainder title: Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET
    Author: 李政逵
    other author: 劉耿銘
    Published: [花蓮縣壽豐鄉] : [國立東華大學電機工程學系], : 2012[民101],
    Description: 4,58面 : 圖,表 ; 30公分
    Notes: 指導教授:劉耿銘
    Online resource: http://134.208.29.93/cgi-bin/cdrfb3/gsweb.cgi?ccd=EeDpZK&o=e2&dbid=I%2B3%3D%3C19%2A%3B%25.&dbpathf=/opt/cdrfb3/db/stdcdrf/&fuid=01&dbna=
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GE0128218 五樓論文區 (5F Theses & Dissertations) 03.不外借_N 本校碩士論文 T 448.6 4013 2012 一般使用(Normal) On shelf 0
  • 1 records • Pages 1 •
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