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20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變...
~
李政逵
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20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = = Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = / 李政逵撰
Reminder of title:
Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
remainder title:
Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET
Author:
李政逵
other author:
劉耿銘
Published:
[花蓮縣壽豐鄉] : [國立東華大學電機工程學系], : 2012[民101],
Description:
4,58面 : 圖,表 ; 30公分
Notes:
指導教授:劉耿銘
Online resource:
http://134.208.29.93/cgi-bin/cdrfb3/gsweb.cgi?ccd=EeDpZK&o=e2&dbid=I%2B3%3D%3C19%2A%3B%25.&dbpathf=/opt/cdrfb3/db/stdcdrf/&fuid=01&dbna=
20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = = Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
李政逵
20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 =
Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET / Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET李政逵撰 - 初版 - [花蓮縣壽豐鄉] : [國立東華大學電機工程學系], 2012[民101] - 4,58面 : 圖,表 ; 30公分
指導教授:劉耿銘
碩士論文-- 國立東華大學電機工程學系電子工程碩士班
參考書目:面39-40
贈閱Subjects--Index Terms:
變異性
20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 = = Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
LDR
:01152cam a2200265 i 4500
001
1281644
005
20121024100629.0
008
170420n2012uuuuch e 000 u chi d
035
$a
NDHU10002
035
$a
1281644
040
$a
NDHU
$b
chi
$e
ccr
100
1
$a
李政逵
$e
撰
$3
3034075
245
1 0
$a
20奈米N型金氧半場效電晶體與多閘極 絕緣層上金氧半場效電晶體臨限電壓變 =
$b
Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET /
$c
李政逵撰
246
1 1
$a
Simulation of the threshold voltage Variability of 20-nm Bulk MOSFET and Multiple-Gate SOI MOSFET
250
$a
初版
260
$a
[花蓮縣壽豐鄉] :
$b
[國立東華大學電機工程學系],
$c
2012[民101]
300
$a
4,58面 :
$b
圖,表 ;
$c
30公分
500
$a
指導教授:劉耿銘
502
$a
碩士論文-- 國立東華大學電機工程學系電子工程碩士班
504
$a
參考書目:面39-40
504
$a
含附錄
563
$a
贈閱
653
0
$a
變異性
653
0
$a
隨機摻雜
653
0
$a
variability
653
0
$a
random dopant
700
1
$a
劉耿銘
$e
指導
$3
3034072
700
1
$a
Lee, Cheng-Kuel
$3
3034076
700
1
$a
Liu, Keng-Ming
$3
3034074
856
7
$u
http://134.208.29.93/cgi-bin/cdrfb3/gsweb.cgi?ccd=EeDpZK&o=e2&dbid=I%2B3%3D%3C19%2A%3B%25.&dbpathf=/opt/cdrfb3/db/stdcdrf/&fuid=01&dbna=
$2
http
based on 0 review(s)
Location:
ALL
五樓論文區 (5F Theses & Dissertations)
Year:
Volume Number:
Items
1 records • Pages 1 •
1
Inventory Number
Location Name
Item Class
Material type
Call number
Usage Class
Loan Status
No. of reservations
Opac note
Attachments
GE0128218
五樓論文區 (5F Theses & Dissertations)
03.不外借_N
本校碩士論文
T 448.6 4013 2012
一般使用(Normal)
On shelf
0
1 records • Pages 1 •
1
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