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Metal oxide semiconductors, Complementary - Effect of temperature on.
Overview
Works:
1 works in 1 publications in 1 languages
Titles
Recent advances in PMOS negative bias temperature instability = characterization and modeling of device architecture, material and process impact /
by:
(Electronic resources)
Subjects
Solid State Physics.
Electronics and Microelectronics, Instrumentation.
Metal oxide semiconductors, Complementary- Effect of temperature on.
Circuits and Systems.
Metal oxide semiconductors, Complementary- Reliability.
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