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Investigation of indium aluminum pho...

Cao, Ying.

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Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications./
作者:	Cao, Ying.
面頁冊數:	105 p.
附註:	Adviser: Douglas C. Hall.
Contained By:	Dissertation Abstracts International67-06B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3221316
ISBN:	9780542724329

Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications.
Cao, Ying.

Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications. - 105 p.

Adviser: Douglas C. Hall.

Thesis (Ph.D.)--University of Notre Dame, 2006.

The wet thermal oxides of InAlP have been carefully studied to explore the potential of such films for use as a gate dielectric in GaAs metal-oxide-semiconductor (MOS) device applications. The kinetics of wet thermal oxidation of InAlP epitaxial layers lattice-matched to GaAs and the electrical properties of the resulting InAlP wet thermal oxides when scaled to reduced thicknesses have been investigated. Also presented are results of investigations of the dry thermal oxidation of InAlP epilayers and the electrical properties of the resulting dry oxide films. GaAs-based metal-oxide-semiconductor field-effect transistor (MOSFET) devices with InAlP wet oxides as the gate insulator have been fabricated and characterized on two heterostructures. MOSFETs having a 1 mum gate length exhibit excellent microwave performance with a current gain cutoff frequency of 17.0 GHz and a maximum frequency of oscillation of 74.8 GHz on a device heterostructure with a 7.5 nm thick gate oxide layer.

ISBN: 9780542724329Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications.
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520 $a The wet thermal oxides of InAlP have been carefully studied to explore the potential of such films for use as a gate dielectric in GaAs metal-oxide-semiconductor (MOS) device applications. The kinetics of wet thermal oxidation of InAlP epitaxial layers lattice-matched to GaAs and the electrical properties of the resulting InAlP wet thermal oxides when scaled to reduced thicknesses have been investigated. Also presented are results of investigations of the dry thermal oxidation of InAlP epilayers and the electrical properties of the resulting dry oxide films. GaAs-based metal-oxide-semiconductor field-effect transistor (MOSFET) devices with InAlP wet oxides as the gate insulator have been fabricated and characterized on two heterostructures. MOSFETs having a 1 mum gate length exhibit excellent microwave performance with a current gain cutoff frequency of 17.0 GHz and a maximum frequency of oscillation of 74.8 GHz on a device heterostructure with a 7.5 nm thick gate oxide layer.
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