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Ultra-thin nanocomposite diffusion b...

Zhang, Yu.

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Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits./
Author:	Zhang, Yu.
Description:	67 p.
Notes:	Adviser: Samir Aouadi.
Contained By:	Masters Abstracts International44-05.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1435557
ISBN:	9780542647093

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.
Zhang, Yu.

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits. - 67 p.

Adviser: Samir Aouadi.

Thesis (M.S.)--Southern Illinois University at Carbondale, 2006.

The aim of this thesis is to investigate the optical chemical and structural properties of ultra-thin TaN and TaSiN diffusion barriers. All different sets of thin film coatings were deposited on polished Si(100) wafers via unbalanced reactive magnetron sputtering technique and studied by means of X-ray Diffraction, Rutherford backscattering spectroscopy, Time-of-Flight Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Spectroscopic Ellipsometry.

ISBN: 9780542647093Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.
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005 20110928
008 110928s2006 eng d
020 $a 9780542647093
035 $a (UMI)AAI1435557
035 $a AAI1435557
040 $a UMI $c UMI
100 1 $a Zhang, Yu. $3 1057601
245 1 0 $a Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.
300 $a 67 p.
500 $a Adviser: Samir Aouadi.
500 $a Source: Masters Abstracts International, Volume: 44-05, page: 2329.
502 $a Thesis (M.S.)--Southern Illinois University at Carbondale, 2006.
520 $a The aim of this thesis is to investigate the optical chemical and structural properties of ultra-thin TaN and TaSiN diffusion barriers. All different sets of thin film coatings were deposited on polished Si(100) wafers via unbalanced reactive magnetron sputtering technique and studied by means of X-ray Diffraction, Rutherford backscattering spectroscopy, Time-of-Flight Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Spectroscopic Ellipsometry.
520 $a Real-time spectroscopic ellipsometry (RTSE) will be utilized as a tool to understand the growth process of these materials, and to monitor their thermal stability in real time. RTSE data was simulated using the Drude-Lorentz model to obtain information about the growth mechanism and the conduction electron transport properties for these structures. The films were annealed up to 800°C and the diffusion of copper into silicon was evaluated by monitoring changes in the optical properties of the bilayers.
590 $a School code: 0209.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0611
690 $a 0794
710 2 0 $a Southern Illinois University at Carbondale. $3 718932
773 0 $t Masters Abstracts International $g 44-05.
790 $a 0209
790 1 0 $a Aouadi, Samir, $e advisor
791 $a M.S.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1435557