東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Growth and characterization of nonpo...

Chakraborty, Arpan.

FindBook

Google Book

Amazon

博客來

Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices./
作者:	Chakraborty, Arpan.
面頁冊數:	216 p.
附註:	Adviser: Umesh K. Mishra.
Contained By:	Dissertation Abstracts International67-01B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3206412
ISBN:	9780542535178

Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices.
Chakraborty, Arpan.

Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices. - 216 p.

Adviser: Umesh K. Mishra.

Thesis (Ph.D.)--University of California, Santa Barbara, 2006.

In summary, the result of the experiments described in this thesis reveals the potential of nonpolar and semipolar Group-III nitrides based devices, which are free of polarization-induced electric fields.

ISBN: 9780542535178Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices.
LDR:03185nam 2200313 a 45 001 965217
005 20110906
008 110906s2006 eng d
020 $a 9780542535178
035 $a (UnM)AAI3206412
035 $a AAI3206412
040 $a UnM $c UnM
100 1 $a Chakraborty, Arpan. $3 1287997
245 1 0 $a Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices.
300 $a 216 p.
500 $a Adviser: Umesh K. Mishra.
500 $a Source: Dissertation Abstracts International, Volume: 67-01, Section: B, page: 0424.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2006.
520 $a In summary, the result of the experiments described in this thesis reveals the potential of nonpolar and semipolar Group-III nitrides based devices, which are free of polarization-induced electric fields.
520 $a Conventional state-of-the-art wurtzite nitrides based light-emitters, grown along the polar c-direction, are characterized by the presence of polarization-induced electrostatic fields in the quantum wells. These built-in fields are detrimental to the performance of optoelectronic devices. Growth of light-emitters along nonpolar and semipolar directions is an effective means to circumvent the adverse effects of polarization. This dissertation focuses on the growth and characterization of nonpolar and semipolar (Al, Ga, In)N based heterostructures and devices. Two nonpolar planes, a- and m-, and two semipolar planes, (10 11) and (1013), have been investigated in this thesis.
520 $a Initially, the growth of n-type and p-type nonpolar a-plane GaN was optimized to yield cladding layers of the highest possible conductivity in the devices. Various interesting observations, e.g. low acceptor activation energy, anisotropic conductivity, etc, were made during the course of this study. In order to achieve defect reduction in planar a-plane GaN films, in-situ SiNx interlayers were used as nano-mask. The effect of SiNx interlayer on the structural and optical properties of the overgrown GaN layer was investigated.
520 $a Growth of InGaN/GaN multiple-quantum wells (MQWs) along nonpolar and semipolar planes was investigated and their structural and optical properties were studied. The effect of defects on the emission properties of the MQWs has been addressed. Optical measurements revealed the absence of polarization in the MQWs. Based on the MQW optimization, light-emitting diodes were grown on nonpolar and semipolar templates and their electrical and optical properties were studied. Electroluminescence measurement confirmed the absence of built-in electric fields in the quantum well. We demonstrated the first nonpolar and semipolar light-emitting diodes with milliwatt-range output power. DC output power as high as 0.6 mW at 20 mA and pulsed output power as high as 23.5 mW at 1 A were measured.
590 $a School code: 0035.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
710 2 0 $a University of California, Santa Barbara. $3 1017586
773 0 $t Dissertation Abstracts International $g 67-01B.
790 $a 0035
790 1 0 $a Mishra, Umesh K., $e advisor
791 $a Ph.D.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3206412