東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Epitaxial growth and characterizatio...

Srivastava, Swedesh Kumar.

Linked to FindBook

Google Book

Amazon

博客來

Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors./
Author:	Srivastava, Swedesh Kumar.
Description:	403 p.
Notes:	Adviser: Christopher J. Palmstrom.
Contained By:	Dissertation Abstracts International69-02B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3297488
ISBN:	9780549468349

Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors.
Srivastava, Swedesh Kumar.

Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors. - 403 p.

Adviser: Christopher J. Palmstrom.

Thesis (Ph.D.)--University of Minnesota, 2008.

The integration of ferromagnetic metals and alloys with metal oxides and vice versa can be of importance for the formation of multifunctional material heterostructure and can lead to novel device applications. This research examines the effect of epitaxial growth condition on the structural, morphological, chemical and magnetic properties of the ferromagnetic films of Fe and Co2MnGe on metal oxides surfaces of (Sr,Ba)TiO3, and MgO (001).

ISBN: 9780549468349Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors.
LDR:03370nam 2200337 a 45 001 957682
005 20110630
008 110630s2008 ||||||||||||||||| ||eng d
020 $a 9780549468349
035 $a (UMI)AAI3297488
035 $a AAI3297488
040 $a UMI $c UMI
100 1 $a Srivastava, Swedesh Kumar. $3 1281025
245 1 0 $a Epitaxial growth and characterization of multifunctional heterostructures: Integrating ferromagnets, ferroelectrics, insulators and III-V semiconductors.
300 $a 403 p.
500 $a Adviser: Christopher J. Palmstrom.
500 $a Source: Dissertation Abstracts International, Volume: 69-02, Section: B, page: 1266.
502 $a Thesis (Ph.D.)--University of Minnesota, 2008.
520 $a The integration of ferromagnetic metals and alloys with metal oxides and vice versa can be of importance for the formation of multifunctional material heterostructure and can lead to novel device applications. This research examines the effect of epitaxial growth condition on the structural, morphological, chemical and magnetic properties of the ferromagnetic films of Fe and Co2MnGe on metal oxides surfaces of (Sr,Ba)TiO3, and MgO (001).
520 $a The substrate temperature during the molecular beam epitaxy growth of Fe and Co2MnGe films on SrTiO3 and BaTiO3/SrTiO 3 (001) surfaces and Co2MnGe films on MgO (001) affects the extent of 3-D island growth mode. The enhancement of magnetic coercivity with higher growth temperatures was correlated to the domain wall pinning at the island edges.
520 $a Co2MnGe grows in a new relaxed tetragonal phase at low growth temperatures and in the expected cubic structure at higher growth temperatures. The low temperature tetragonal phase, in contrast with the high temperature cubic phase, has induced perpendicular magnetocrystalline anisotropy. The crystal quality and atomic ordering in the Co2MnGe films improve with higher growth temperatures. The atomic disorder was found to introduce in-plane magnetic anisotropy. Co2MnGe was found to be thermally stable to higher temperatures on MgO (600°C) as compared to 350°C on SrTiO3 and 450°C on BaTiO3. A two-step growth mode not only improved the crystallinity, atomic ordering and surface roughness of the Co2MnGe films but also helped avoid interfacial reactions with the substrates.
520 $a The epitaxial ME heterostructure in the reverse form, BaTiO3/Fe/GaAs (001) was achieved by using a 20ML-thick diffusion barrier layer of Sc 0.3Er0.7As in between Fe and GaAs substrates; and a 700A-thick oxidation barrier layer of MgO between BaTiO3 and Fe.
520 $a The epitaxial Fe/BaTiO3 (001) heterostructure was investigated for the lattice coupling. The magnetization and magnetic anisotropy of Fe were dynamically changed by the structural changes in the underlying BaTiO 3 lattice. It was observed that the induced change in magnetization scales with the Fe film thickness and extrapolates to the zero value for the zero film thickness showing the stronger influence of the volume strain rather that the interface electronic effects.
590 $a School code: 0130.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
690 $a 0794
710 2 $a University of Minnesota. $b Material Science and Engineering. $3 1057976
773 0 $t Dissertation Abstracts International $g 69-02B.
790 $a 0130
790 1 0 $a Palmstrom, Christopher J., $e advisor
791 $a Ph.D.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3297488