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Lead antimony sulfides as potential ...

Versavel, Matthieu.

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Lead antimony sulfides as potential solar absorbers for thin-film solar cells.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Lead antimony sulfides as potential solar absorbers for thin-film solar cells./
Author:	Versavel, Matthieu.
Description:	349 p.
Notes:	Source: Dissertation Abstracts International, Volume: 68-07, Section: B, page: 4478.
Contained By:	Dissertation Abstracts International68-07B.
Subject:	Chemistry, Inorganic. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=NR29760
ISBN:	9780494297605

Lead antimony sulfides as potential solar absorbers for thin-film solar cells.
Versavel, Matthieu.

Lead antimony sulfides as potential solar absorbers for thin-film solar cells. - 349 p.

Source: Dissertation Abstracts International, Volume: 68-07, Section: B, page: 4478.

Thesis (Ph.D.)--University of Alberta (Canada), 2007.

This thesis reports the thin film synthesis and the optical characterization of several lead antimony sulfide films as potential light absorbers for thin-film solar cells and the efforts to combinatorially investigate the Hf-Zr-Sb phase diagram. Cells based on direct band gap semiconductors, such as CuInS 2 and Cu(In,Ga)Se2, that absorb light strongly are promising alternatives to Si-based solar cells. Although the efficiencies of these cells are excellent, the toxicity of cadmium and the availability of indium and tellurium will ultimately limit their use and their electricity generation capacity. Our approach is to develop new semiconductor thin films that contain only cost effective, abundant, and relatively less toxic materials. Most of the lead antimony sulfides exhibit suitable optical band gaps for thin film photovoltaic applications. The preparation of amorphous and polycrystalline antimony sulfide thin films from RF-sputtering of an Sb2S 3 target and subsequent annealing at 400°C in sulfur vapor yielded smooth and compact semiconductor thin films. In an effort to prepare polycrystalline films of lead antimony sulfides, sputtered metallic Pb-Sb precursor films were annealed in sulfur vapor. It was observed that the inevitable initial formation of PbS was detrimental to the product film morphology and control of the film composition. A more successful approach was to react sulfur-containing precursor films composed of crystalline PbS and amorphous (Sb,S) layers prepared by cycled sputtering of Sb2S3 and Pb under sulfur vapor. The sulfur-containing layered precursor films were essential to prepare phase-pure ternary films with good morphology. Moreover, films of the plagionite group phases were preferentially obtained, indicating that the presence of hydrogen is not necessary for the occurrence of the plagionite phases, and suggesting their metastability. Despite a lack of precise control over the as-deposited Sb:Pb ratio, sulfurization of the unique crystalline PbS and amorphous (Sb,S) layered precursor films yielded smooth, continuous and phase-pure films of the four plagionite group phases with appropriate optical properties: strong absorption coefficients and direct band gaps ranging from 1.5 eV to 1.9 eV.

ISBN: 9780494297605Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Lead antimony sulfides as potential solar absorbers for thin-film solar cells.
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245 1 0 $a Lead antimony sulfides as potential solar absorbers for thin-film solar cells.
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502 $a Thesis (Ph.D.)--University of Alberta (Canada), 2007.
520 $a This thesis reports the thin film synthesis and the optical characterization of several lead antimony sulfide films as potential light absorbers for thin-film solar cells and the efforts to combinatorially investigate the Hf-Zr-Sb phase diagram. Cells based on direct band gap semiconductors, such as CuInS 2 and Cu(In,Ga)Se2, that absorb light strongly are promising alternatives to Si-based solar cells. Although the efficiencies of these cells are excellent, the toxicity of cadmium and the availability of indium and tellurium will ultimately limit their use and their electricity generation capacity. Our approach is to develop new semiconductor thin films that contain only cost effective, abundant, and relatively less toxic materials. Most of the lead antimony sulfides exhibit suitable optical band gaps for thin film photovoltaic applications. The preparation of amorphous and polycrystalline antimony sulfide thin films from RF-sputtering of an Sb2S 3 target and subsequent annealing at 400°C in sulfur vapor yielded smooth and compact semiconductor thin films. In an effort to prepare polycrystalline films of lead antimony sulfides, sputtered metallic Pb-Sb precursor films were annealed in sulfur vapor. It was observed that the inevitable initial formation of PbS was detrimental to the product film morphology and control of the film composition. A more successful approach was to react sulfur-containing precursor films composed of crystalline PbS and amorphous (Sb,S) layers prepared by cycled sputtering of Sb2S3 and Pb under sulfur vapor. The sulfur-containing layered precursor films were essential to prepare phase-pure ternary films with good morphology. Moreover, films of the plagionite group phases were preferentially obtained, indicating that the presence of hydrogen is not necessary for the occurrence of the plagionite phases, and suggesting their metastability. Despite a lack of precise control over the as-deposited Sb:Pb ratio, sulfurization of the unique crystalline PbS and amorphous (Sb,S) layered precursor films yielded smooth, continuous and phase-pure films of the four plagionite group phases with appropriate optical properties: strong absorption coefficients and direct band gaps ranging from 1.5 eV to 1.9 eV.
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