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Quantum corrected Monte Carlo simula...

Wu, Bo.

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Quantum corrected Monte Carlo simulation for semiconductor devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Quantum corrected Monte Carlo simulation for semiconductor devices./
作者:	Wu, Bo.
面頁冊數:	148 p.
附註:	Director: Ting-wei Tang.
Contained By:	Dissertation Abstracts International65-06B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3136795
ISBN:	9780496839919

Quantum corrected Monte Carlo simulation for semiconductor devices.
Wu, Bo.

Quantum corrected Monte Carlo simulation for semiconductor devices. - 148 p.

Director: Ting-wei Tang.

Thesis (Ph.D.)--University of Massachusetts Amherst, 2004.

An effective conduction-band edge (ECBE) equation has been derived based on the Schrodinger-Bohm model by eliminating the density-gradient term. When applied to the Monte Carlo (MC) simulation of semiconductor devices using the quantum corrected Boltzmann transport equation (BTE), this method has the advantage of not being affected by density fluctuations.

ISBN: 9780496839919Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Quantum corrected Monte Carlo simulation for semiconductor devices.
LDR:02473nam 2200289 a 45 001 956290
005 20110624
008 110624s2004 eng d
020 $a 9780496839919
035 $a (UMI)AAI3136795
035 $a AAI3136795
040 $a UMI $c UMI
100 1 $a Wu, Bo. $3 1269406
245 1 0 $a Quantum corrected Monte Carlo simulation for semiconductor devices.
300 $a 148 p.
500 $a Director: Ting-wei Tang.
500 $a Source: Dissertation Abstracts International, Volume: 65-06, Section: B, page: 3080.
502 $a Thesis (Ph.D.)--University of Massachusetts Amherst, 2004.
520 $a An effective conduction-band edge (ECBE) equation has been derived based on the Schrodinger-Bohm model by eliminating the density-gradient term. When applied to the Monte Carlo (MC) simulation of semiconductor devices using the quantum corrected Boltzmann transport equation (BTE), this method has the advantage of not being affected by density fluctuations.
520 $a The existing Bohm-based and Wigner-based quantum correction models are unified under a single (ECBE) method via a density-dependent quantum correction coefficient. The difference between our ECBE model and the effective potential model is also described in detail. The utility and accuracy of the ECBE method is tested on a simple problem of charge confinement in an infinite potential well and of particle tunneling through a step potential barrier. Both results indicate that the ECBE method is a viable approach to the quantum correction of the BTE.
520 $a The ECBE model has been applied to the MC simulations of double gate MOSFETS. Unlike the simulation by the hydrodynamic model, the MC method does not need to assume a mobility model which is difficult to establish for nanoscale devices. The quantum effects affecting both the potential and charge density in the device are successfully simulated. Our study shows that the coupling between the two channels in asymmetric double gate devices is affected more strongly by the silicon-layer thickness than by the channel length. Also, the drain induced barrier lowering effect becomes important for the double gate MOSFETs once the channel length becomes shorter than 20nm.
590 $a School code: 0118.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a University of Massachusetts Amherst. $3 1019433
773 0 $t Dissertation Abstracts International $g 65-06B.
790 $a 0118
790 1 0 $a Tang, Ting-wei, $e advisor
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3136795