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Path-integral Monte Carlo methods for ultrasmall device modeling.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Path-integral Monte Carlo methods for ultrasmall device modeling./
Author:	Register, Leonard Franklin, II.
Description:	117 p.
Notes:	Director: M. A. Littlejohn.
Contained By:	Dissertation Abstracts International51-02B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9017698

Path-integral Monte Carlo methods for ultrasmall device modeling.
Register, Leonard Franklin, II.

Path-integral Monte Carlo methods for ultrasmall device modeling. - 117 p.

Director: M. A. Littlejohn.

Thesis (Ph.D.)--North Carolina State University, 1990.

Monte Carlo methods based on the Feynman path-integral (FPI) formulation of quantum mechanics are developed for modeling ultrasmall device structures. A brief introduction to pertinent aspects of the FPI formalism is given. A practical "path-integral Monte Carlo" (PIMC) method for modeling equilibrium properties in ultrasmall devices is described and used to perform representative calculations of equilibrium properties of carrier confined in ultrasmall device structures, absent carrier-phonon coupling. As a spinoff of the PIMC research but without employing the FPI formalism, calculations of carrier-localized-phonon scattering rates for single and double optical-phonon-mode alloy semiconductors are performed, without assuming any specific functional form or degree of phonon localization. With the help of insights gained in the analysis of alloys semiconductors, the influence functional (the mathematical device for including carrier-phonon coupling effects in the FPI formalism) for carrier-polar-optical-phonon coupling is reexamined and generalized for heterostructures. An improved numerical method for evaluating the influence functional is developed. As a representative example of PIMC analysis of carrier-phonon coupling effects, calculations of carrier self-energies (the energy shift of carriers that results from coupling to phonons) in single crystals and quantum wires as a function of temperature are performed, though using the less general form of the influence functional for convenience and to allow comparison to previous results. A PIMC method appropriate for studying short-time transient behavior of carriers in ultrasmall devices is developed, examples given and the method compared to other transient-time PIMC methods. Based on this work, recommendations for future research are made.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Path-integral Monte Carlo methods for ultrasmall device modeling.
LDR:02672nam 2200265 a 45 001 956274
005 20110624
008 110624s1990 eng d
035 $a (UMI)AAI9017698
035 $a AAI9017698
040 $a UMI $c UMI
100 1 $a Register, Leonard Franklin, II. $3 1279736
245 1 0 $a Path-integral Monte Carlo methods for ultrasmall device modeling.
300 $a 117 p.
500 $a Director: M. A. Littlejohn.
500 $a Source: Dissertation Abstracts International, Volume: 51-02, Section: B, page: 0908.
502 $a Thesis (Ph.D.)--North Carolina State University, 1990.
520 $a Monte Carlo methods based on the Feynman path-integral (FPI) formulation of quantum mechanics are developed for modeling ultrasmall device structures. A brief introduction to pertinent aspects of the FPI formalism is given. A practical "path-integral Monte Carlo" (PIMC) method for modeling equilibrium properties in ultrasmall devices is described and used to perform representative calculations of equilibrium properties of carrier confined in ultrasmall device structures, absent carrier-phonon coupling. As a spinoff of the PIMC research but without employing the FPI formalism, calculations of carrier-localized-phonon scattering rates for single and double optical-phonon-mode alloy semiconductors are performed, without assuming any specific functional form or degree of phonon localization. With the help of insights gained in the analysis of alloys semiconductors, the influence functional (the mathematical device for including carrier-phonon coupling effects in the FPI formalism) for carrier-polar-optical-phonon coupling is reexamined and generalized for heterostructures. An improved numerical method for evaluating the influence functional is developed. As a representative example of PIMC analysis of carrier-phonon coupling effects, calculations of carrier self-energies (the energy shift of carriers that results from coupling to phonons) in single crystals and quantum wires as a function of temperature are performed, though using the less general form of the influence functional for convenience and to allow comparison to previous results. A PIMC method appropriate for studying short-time transient behavior of carriers in ultrasmall devices is developed, examples given and the method compared to other transient-time PIMC methods. Based on this work, recommendations for future research are made.
590 $a School code: 0155.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
710 2 $a North Carolina State University. $3 1018772
773 0 $t Dissertation Abstracts International $g 51-02B.
790 $a 0155
790 1 0 $a Littlejohn, M. A., $e advisor
791 $a Ph.D.
792 $a 1990
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9017698