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Atomic layer deposition of metal fil...

Li, Zhengwen.

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Atomic layer deposition of metal films: From precursor synthesis to film deposition.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Atomic layer deposition of metal films: From precursor synthesis to film deposition./
Author:	Li, Zhengwen.
Description:	222 p.
Notes:	Adviser: Roy G. Gordon.
Contained By:	Dissertation Abstracts International68-05B.
Subject:	Chemistry, Inorganic. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3265186
ISBN:	9780549040057

Atomic layer deposition of metal films: From precursor synthesis to film deposition.
Li, Zhengwen.

Atomic layer deposition of metal films: From precursor synthesis to film deposition. - 222 p.

Adviser: Roy G. Gordon.

Thesis (Ph.D.)--Harvard University, 2007.

Atomic Layer Deposition (ALD) has become one of the most promising candidates for making thin and continuous films recently with precise thickness control in microelectronics. Successful applications of ALD depend on whether appropriate precursor chemistry can be designed and whether proper deposition conditions can be developed. In this thesis, ALD of metals, such as Cu, Co and Fe films, from precursor synthesis and characterization to film depositions are investigated and their applications are discussed.

ISBN: 9780549040057Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Atomic layer deposition of metal films: From precursor synthesis to film deposition.
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020 $a 9780549040057
035 $a (UMI)AAI3265186
035 $a AAI3265186
040 $a UMI $c UMI
100 1 $a Li, Zhengwen. $3 1278405
245 1 0 $a Atomic layer deposition of metal films: From precursor synthesis to film deposition.
300 $a 222 p.
500 $a Adviser: Roy G. Gordon.
500 $a Source: Dissertation Abstracts International, Volume: 68-05, Section: B, page: 3076.
502 $a Thesis (Ph.D.)--Harvard University, 2007.
520 $a Atomic Layer Deposition (ALD) has become one of the most promising candidates for making thin and continuous films recently with precise thickness control in microelectronics. Successful applications of ALD depend on whether appropriate precursor chemistry can be designed and whether proper deposition conditions can be developed. In this thesis, ALD of metals, such as Cu, Co and Fe films, from precursor synthesis and characterization to film depositions are investigated and their applications are discussed.
520 $a A group of amidinates of Cu, Co, and Fe metals were synthesized and characterized. The correlation of the precursors' structures to their properties was developed and analyzed. Generally speaking, precursors with high volatility, low melting point, efficient thermal stability and high reactivity are desirable for ALD applications. These properties depend on the molecular structures. Long-chain alkyl groups in the amidinate ligands tend to disrupt the crystal structure of the metalorganic complex, leading to compounds with low melting points. But increasing the molecular weight will result in low vapor pressure. Bulky ligands shielded the metal center well, which led to high stability but poor reactivity. In order to provide good precursors, a combination of different effects and proper chemistry should be taken into account. The results provide insightful information for precursor design of metalorganic synthesis and their applications in Chemical Vapor Deposition (CVD) and ALD depositions.
520 $a Thin and continuous copper films serve as seed layers for electrodeposition of Cu interconnects in microelectronic devices. In this thesis, two methods were used to make copper films. The first technique was to ALD deposit Cu films from copper(I) amidinates with H2 as the reducing agent. The other method was to deposit copper(I) nitride by ALD first from the alternating reactions of copper(I) amidinates vapor and ammonia. Then Cu3N was reduced to copper metal by H2 and heat. 3 nm thick copper films on 2 nm of ruthenium have a sheet resistance less than 50 ohms per square, a value low enough to serve as seed layers for electroplating copper. The morphology of Cu films is surface dependent, no matter whether it is from ALD deposited Cu or from reduction of Cu3N. On oxides and nitrides, Cu diffused and agglomerated quickly to form big nuclei. On metal surfaces, Cu adhered well so that Cu nucleated as a continuous layer on Co, Fe and Ru surfaces. The nucleation and adhesion of multilayers of barrier WN/adhesion (Co or Ru)/seed Cu layers were studied by TEM, AFM and Four-Point Bending techniques. WN nucleated uniformly as a continuous, amorphous layer on silicon dioxide (SiO2). Co nucleated as a continuous, nanocrystalline layer on the WN. Cu nucleated as discontinuous islands on SiO2, Si3N4 and WN, but as a continuous, nanocrystalline layer on Co/WN. Extremely strong adhesion was measured for the Cu/Co/WN/SiO 2 structure by four-point bending tests.
520 $a Low temperature ALD deposition is important for making thin and continuous metal films. Liquid, volatile and reactive amidinates of Co and Fe complexes were developed for ALD applications. The reactions were self-limiting at low temperature (100--250°C). The films were characterized as pure and conductive metals, using H2 as the reducing agent.
590 $a School code: 0084.
650 4 $a Chemistry, Inorganic. $3 517253
650 4 $a Chemistry, Physical. $3 560527
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0488
690 $a 0494
690 $a 0794
710 2 $a Harvard University. $3 528741
773 0 $t Dissertation Abstracts International $g 68-05B.
790 $a 0084
790 1 0 $a Gordon, Roy G., $e advisor
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3265186