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Improved organic thin-film transisto...

McDermott, Joseph E.

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Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics./
Author:	McDermott, Joseph E.
Description:	153 p.
Notes:	Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1874.
Contained By:	Dissertation Abstracts International68-03B.
Subject:	Chemistry, General. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3255828

Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics.
McDermott, Joseph E.

Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics. - 153 p.

Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1874.

Thesis (Ph.D.)--Princeton University, 2007.

Organic thin-film transistors (OTFTs) are a promising alternative technology to amorphous silicon devices. Pentacene-based organic thin-film transistors have been fabricated using various phosphonate-linked self-assembled monolayers (SAMs) as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region to explore the relationship between film structure and device performance. Improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer, and are related to structural motif similarities between the pentacene semiconductor and the SAMs. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface that is effected by introduction of the self-assembled monolayer. The alignment of molecular energy levels between a self-assembled monolayer of 9-phosphonoanthracene formed on silicon dioxide and pentacene has been studied using photoelectron spectroscopies. The semiconducting band gap of pentacene was found to be nested within that of the monolayer; the monolayer presents a significant energetic barrier to hole injection from a pentacene overlayer, but only a small to moderate barrier to electrons. Additionally, a scheme was devised that utilized self-limiting interlayer chemistry that deposited linear polyacenes in a controlled, layer-by-layer fashion to produce smooth multilayered constructions. Transistor devices were fabricated on these multilayer constructions, but failed to show any measurable performance, most likely due to chemical interactions of the linking groups or device geometry constraints.Subjects--Topical Terms:

1021807
Chemistry, General.

Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics.
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008 110622s2007 eng d
035 $a (UMI)AAI3255828
035 $a AAI3255828
040 $a UMI $c UMI
100 1 $a McDermott, Joseph E. $3 1277715
245 1 0 $a Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics.
300 $a 153 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1874.
502 $a Thesis (Ph.D.)--Princeton University, 2007.
520 $a Organic thin-film transistors (OTFTs) are a promising alternative technology to amorphous silicon devices. Pentacene-based organic thin-film transistors have been fabricated using various phosphonate-linked self-assembled monolayers (SAMs) as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region to explore the relationship between film structure and device performance. Improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer, and are related to structural motif similarities between the pentacene semiconductor and the SAMs. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface that is effected by introduction of the self-assembled monolayer. The alignment of molecular energy levels between a self-assembled monolayer of 9-phosphonoanthracene formed on silicon dioxide and pentacene has been studied using photoelectron spectroscopies. The semiconducting band gap of pentacene was found to be nested within that of the monolayer; the monolayer presents a significant energetic barrier to hole injection from a pentacene overlayer, but only a small to moderate barrier to electrons. Additionally, a scheme was devised that utilized self-limiting interlayer chemistry that deposited linear polyacenes in a controlled, layer-by-layer fashion to produce smooth multilayered constructions. Transistor devices were fabricated on these multilayer constructions, but failed to show any measurable performance, most likely due to chemical interactions of the linking groups or device geometry constraints.
590 $a School code: 0181.
650 4 $a Chemistry, General. $3 1021807
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0485
690 $a 0794
710 2 $a Princeton University. $3 645579
773 0 $t Dissertation Abstracts International $g 68-03B.
790 $a 0181
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3255828