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Towards a nanocrystalline silicon laser.
~
Chen, Hui.
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Towards a nanocrystalline silicon laser.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Towards a nanocrystalline silicon laser./
作者:
Chen, Hui.
面頁冊數:
142 p.
附註:
Advisers: Philippe M. Fauchet; Yongli Gao.
Contained By:
Dissertation Abstracts International68-08B.
標題:
Physics, Condensed Matter. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279134
ISBN:
9780549204800
Towards a nanocrystalline silicon laser.
Chen, Hui.
Towards a nanocrystalline silicon laser.
- 142 p.
Advisers: Philippe M. Fauchet; Yongli Gao.
Thesis (Ph.D.)--University of Rochester, 2007.
Silicon nanocrystals (quantum dots) have shown great potential in light emission and optical amplification. The purpose of this work is to study the physics of light emission and optical gain in silicon nanocrystals and explore the possibility of a silicon nanocrystal laser. This dissertation discusses the following three sub-topics: effect of surface passivation on silicon nanocrystal light emission and optical gain, ultrafast carrier dynamics in different silicon nanocrystal systems, and fabrication and characterization of silicon nanocrystal based waveguides and laser resonators.
ISBN: 9780549204800Subjects--Topical Terms:
1018743
Physics, Condensed Matter.
Towards a nanocrystalline silicon laser.
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Optical gain is studied by Variable stripe length method in silicon nanocrystal systems prepared by different methods including ion implantation, magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and also of different surface passivations including oxide and nitride. In the oxide passivated nanocrystals, optical gain (up to 60 cm-1) is only observed in the PECVD sample which shows a fast emission component blue shifted from the main photoluminescence peak. In the nitride passivated nanocrystal no optical gain has been observed. The data suggest that oxide passivation plays an important role in providing optical gain from silicon nanocrystals.
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Ultra-fast carrier dynamics in different silicon nanocrystal systems are investigated by femto-second pump probe technique. In oxide passivated nanocrystals, a fast (10-30 ps) carrier trapping in silicon nanocrystal surface states is followed by a slower (200-300 ps) carrier decay process. Neither the fast nor the slow decay component shows any lifetime dependence on pumping intensity. In nitride passivated nanocrystals, we did not observe any fast surface trapping process. The data fit well to a single exponential decay of ∼100 ps lifetime. In both cases, the optical response of the probe signal is dominated by a negative differential transmittance, indicating a pump induced absorption (optical loss) of the probe signal.
520
$a
Silicon nanocrystal waveguides are fabricated and optical losses of 13 dB/cm and 7 dB/cm are measured at 633 and 810 nm, respectively. To explore the possibility of lasing, silicon nanocrystal based laser resonators including lateral distributed Bragg reflector and microspheres are also fabricated and tested. No sign of lasing has been observed.
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