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Hybrid semiconductor nanomagnetoelec...

Bae, Jong Uk.

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Hybrid semiconductor nanomagnetoelectronic devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Hybrid semiconductor nanomagnetoelectronic devices./
作者:	Bae, Jong Uk.
面頁冊數:	163 p.
附註:	Adviser: Jonathan P. Bird.
Contained By:	Dissertation Abstracts International68-05B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3261981

Hybrid semiconductor nanomagnetoelectronic devices.
Bae, Jong Uk.

Hybrid semiconductor nanomagnetoelectronic devices. - 163 p.

Adviser: Jonathan P. Bird.

Thesis (Ph.D.)--State University of New York at Buffalo, 2007.

The subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Hybrid semiconductor nanomagnetoelectronic devices.
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245 1 0 $a Hybrid semiconductor nanomagnetoelectronic devices.
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500 $a Adviser: Jonathan P. Bird.
500 $a Source: Dissertation Abstracts International, Volume: 68-05, Section: B, page: 3255.
502 $a Thesis (Ph.D.)--State University of New York at Buffalo, 2007.
520 $a The subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.
590 $a School code: 0656.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Electricity and Magnetism. $3 1019535
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710 2 0 $a State University of New York at Buffalo. $b Electrical Engineering. $3 1019366
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791 $a Ph.D.
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