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Pulsed laser deposition of doped zin...

Erie, Jean-Marie George.

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Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications./
作者:	Erie, Jean-Marie George.
面頁冊數:	285 p.
附註:	Adviser: David P. Norton.
Contained By:	Dissertation Abstracts International69-01B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3299341
ISBN:	9780549436195

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.
Erie, Jean-Marie George.

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications. - 285 p.

Adviser: David P. Norton.

Thesis (Ph.D.)--University of Florida, 2007.

I analyzed the effects of doping ZnO films with As, N, Nb and Ta and (Mg, Zn)O films by pulsed laser deposition. For the As doped films, photoluminescence and Hall measurements revealed the films were compensated and compensation depended on dopant concentration. The As related acceptor-bound exciton, acceptor binding energy and thermal activation energy was dependent of dopant content and O2 growth pressure. Binding energy of the As related acceptor varied from 190 meV for the ZnO films doped with 0.02 atomic percent of (at %) As to 90 meV for a films doped with 2 at % As. The plot of acceptor optical binding energy against p1/3 suggests that the binding energy at infinite dilution to be approximately 160 meV. The ZnO films doped with 0.2 at % As doped on MgO buffer layer showed the lowest degree of compensation with resistivity, carrier density and mobility on the order of 71 O.cm, 2 x 1016 cm-3 and 2 cm2/(V.s), respectively. N doped films showed acceptor bound emission and N-acceptor binding energy of 160 meV and N doped ZnO optical binding energy did not show any dependence on film N concentration. The donor-bound exciton emission for the Nd and Ta doped films Ire around 3.31 eV and 3.33 eV, respectively. The Mg0.05Zn 0.95O:As0.002 film grown at 500°C and 60 mTorr showed p-type behavior, where as, the As doped films with higher Mg content were n-type regardless of growth conditions.

ISBN: 9780549436195Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.
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502 $a Thesis (Ph.D.)--University of Florida, 2007.
520 $a I analyzed the effects of doping ZnO films with As, N, Nb and Ta and (Mg, Zn)O films by pulsed laser deposition. For the As doped films, photoluminescence and Hall measurements revealed the films were compensated and compensation depended on dopant concentration. The As related acceptor-bound exciton, acceptor binding energy and thermal activation energy was dependent of dopant content and O2 growth pressure. Binding energy of the As related acceptor varied from 190 meV for the ZnO films doped with 0.02 atomic percent of (at %) As to 90 meV for a films doped with 2 at % As. The plot of acceptor optical binding energy against p1/3 suggests that the binding energy at infinite dilution to be approximately 160 meV. The ZnO films doped with 0.2 at % As doped on MgO buffer layer showed the lowest degree of compensation with resistivity, carrier density and mobility on the order of 71 O.cm, 2 x 1016 cm-3 and 2 cm2/(V.s), respectively. N doped films showed acceptor bound emission and N-acceptor binding energy of 160 meV and N doped ZnO optical binding energy did not show any dependence on film N concentration. The donor-bound exciton emission for the Nd and Ta doped films Ire around 3.31 eV and 3.33 eV, respectively. The Mg0.05Zn 0.95O:As0.002 film grown at 500°C and 60 mTorr showed p-type behavior, where as, the As doped films with higher Mg content were n-type regardless of growth conditions.
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650 4 $a Physics, Optics. $3 1018756
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