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Scanning tunneling microscopy study ...

Wang, Jun.

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Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides./
作者:	Wang, Jun.
面頁冊數:	232 p.
附註:	Adviser: Eric I. Altman.
Contained By:	Dissertation Abstracts International68-06B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3267379
ISBN:	9780549067399

Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides.
Wang, Jun.

Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides. - 232 p.

Adviser: Eric I. Altman.

Thesis (Ph.D.)--Yale University, 2007.

Surface nucleation and thin film growth mechanisms on Ge(001) and oxidized Pd(100) were studied by scanning tunneling microscopy (STM) and other techniques in ultra-high vacuum (UHV). Silicon heteroepitaxial growth on Ge(001) was studied with and without an Sb surfactant. Growth was studied at 570 K where Ge segregation was kinetically inhibited but Sb segregation was not. Without Sb, a barrier to descend the double height steps, along with nucleation at domain boundaries, caused three dimensional pyramids to form. The surface roughness increased rapidly with Si coverage. In contrast, Si growth on Sb-terminated Ge(001) led to smaller, more isotropic islands. The surface roughened very slowly with coverage due to the change in island shape.

ISBN: 9780549067399Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides.
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245 1 0 $a Scanning tunneling microscopy study of surface nucleation and thin film growth: Semiconductors and metal oxides.
300 $a 232 p.
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502 $a Thesis (Ph.D.)--Yale University, 2007.
520 $a Surface nucleation and thin film growth mechanisms on Ge(001) and oxidized Pd(100) were studied by scanning tunneling microscopy (STM) and other techniques in ultra-high vacuum (UHV). Silicon heteroepitaxial growth on Ge(001) was studied with and without an Sb surfactant. Growth was studied at 570 K where Ge segregation was kinetically inhibited but Sb segregation was not. Without Sb, a barrier to descend the double height steps, along with nucleation at domain boundaries, caused three dimensional pyramids to form. The surface roughness increased rapidly with Si coverage. In contrast, Si growth on Sb-terminated Ge(001) led to smaller, more isotropic islands. The surface roughened very slowly with coverage due to the change in island shape.
520 $a Gold and palladium growth on Ge(001) were thoroughly studied as a function of coverage and growth temperature using STM. Alternating bright and dim zigzag chains on the surface were attributed to Au-Au and Au-Ge dimer rows. After the surface was covered with chains, additional Au aggregated into three dimensional Au(110) clusters. On the other hand, larger faceted clusters with a ( 3x3 )R300 reconstructed Pd2Ge(0001) surface were observed when several Pd monolayers were deposited at 675 K. Unlike recent results for Au and Pt on Ge(001), under no conditions were ordered metallic chains observed for Pd and Ag. These results support the recent arguments that relativistic effects in the electronic structure of the 5d metals make them behave more like each other in low coordination than the corresponding 4d metals.
520 $a The oxidation of Pd(100) in an oxygen plasma was studied. Different from O2 oxidation, which results in a ( 5x5 )R270 structure and an O coverage that saturates at 0.8 ML, temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) confirmed bulk PdO formation by plasma exposure at 550 K. TPD result of propene reaction on such surfaces showed only a single peak at 490 K for all carbon oxides and water, suggesting a direct oxidation pathway for the adsorbed intact propene molecules. The initial sticking coefficient of propene on the PdO clusters was close to unity indicating a high reaction rate on the oxide surface.
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