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Strain-induced quantization in silic...

Liu, Jun.

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Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings./
作者:	Liu, Jun.
面頁冊數:	135 p.
附註:	Adviser: Alexander Zaslavsky.
Contained By:	Dissertation Abstracts International64-04B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3087300

Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings.
Liu, Jun.

Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings. - 135 p.

Adviser: Alexander Zaslavsky.

Thesis (Ph.D.)--Brown University, 2003.

Quantization due to strain gradients in silicon-based semiconductor nanostructures has been investigated both theoretically and experimentally. When vertical quantum dots are fabricated from strained-layer Si/SiGe heterostructures, the creation of the stress-free lateral surface can cause strain relaxation through sidewall expansion, leading to a spatially inhomogeneous strain field. This strain field can induce lateral quantum confinement, in addition to the usual vertical confinement by the heterostructures. We employed magnetotunneling spectroscopy to probe the inhomogeneous-strain-induced quantization in deep submicron strained <italic>p</italic>-Si/SiGe vertical quantum dots. We demonstrated that the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The indication of the strain-induced quantization was first found in a non-gated double-barrier vertical quantum dot. Later, we obtained unambiguous evidence of strain-induced quantum ring hole states in a gated triple-barrier vertical quantum dot. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in &phis;/&phis;<sub> 0</sub> but the magnitude of the energy shifts is larger than predicted by simple ring theory. Single hole tunneling to the ground state of the strain-induced quantum ring and Coulomb blockade were also observed in an ultrasmall vertical quantum dot, and the energy spectrum of the single-particle quantum ring ground state in magnetic fields was obtained. Accordingly, magnetotunneling spectroscopy can be effectively used to investigate the strain relaxation and strain-induced quantization in strained nanostructures quantitatively. Our findings also suggest a novel way to fabricate and study quantum ring structures.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings.
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035 $a (UnM)AAI3087300
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100 1 $a Liu, Jun. $3 1064834
245 1 0 $a Strain-induced quantization in silicon/silicon germanide vertical quantum dots and rings.
300 $a 135 p.
500 $a Adviser: Alexander Zaslavsky.
500 $a Source: Dissertation Abstracts International, Volume: 64-04, Section: B, page: 1775.
502 $a Thesis (Ph.D.)--Brown University, 2003.
520 $a Quantization due to strain gradients in silicon-based semiconductor nanostructures has been investigated both theoretically and experimentally. When vertical quantum dots are fabricated from strained-layer Si/SiGe heterostructures, the creation of the stress-free lateral surface can cause strain relaxation through sidewall expansion, leading to a spatially inhomogeneous strain field. This strain field can induce lateral quantum confinement, in addition to the usual vertical confinement by the heterostructures. We employed magnetotunneling spectroscopy to probe the inhomogeneous-strain-induced quantization in deep submicron strained <italic>p</italic>-Si/SiGe vertical quantum dots. We demonstrated that the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The indication of the strain-induced quantization was first found in a non-gated double-barrier vertical quantum dot. Later, we obtained unambiguous evidence of strain-induced quantum ring hole states in a gated triple-barrier vertical quantum dot. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in &phis;/&phis;<sub> 0</sub> but the magnitude of the energy shifts is larger than predicted by simple ring theory. Single hole tunneling to the ground state of the strain-induced quantum ring and Coulomb blockade were also observed in an ultrasmall vertical quantum dot, and the energy spectrum of the single-particle quantum ring ground state in magnetic fields was obtained. Accordingly, magnetotunneling spectroscopy can be effectively used to investigate the strain relaxation and strain-induced quantization in strained nanostructures quantitatively. Our findings also suggest a novel way to fabricate and study quantum ring structures.
590 $a School code: 0024.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Condensed Matter. $3 1018743
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710 2 0 $a Brown University. $3 766761
773 0 $t Dissertation Abstracts International $g 64-04B.
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791 $a Ph.D.
792 $a 2003
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