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Cathodoluminescence from II-VI quant...

Nikiforov, Alexey Yuriyevich.

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Cathodoluminescence from II-VI quantum well light emitting diodes.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Cathodoluminescence from II-VI quantum well light emitting diodes./
作者:	Nikiforov, Alexey Yuriyevich.
面頁冊數:	174 p.
附註:	Adviser: G. S. Cargill, III.
Contained By:	Dissertation Abstracts International64-04B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3086961

Cathodoluminescence from II-VI quantum well light emitting diodes.
Nikiforov, Alexey Yuriyevich.

Cathodoluminescence from II-VI quantum well light emitting diodes. - 174 p.

Adviser: G. S. Cargill, III.

Thesis (Ph.D.)--Lehigh University, 2003.

The objectives of the present research were to advance understanding of luminescence degradation, defects, and bias-dependent carrier confinement and transport in ZnCd(Mg)Se-based quantum well (QW) LED structures grown by molecular beam epitaxy. Most data were obtained from three LED samples. One was a ZnCdSe QW-based red LED with Au coating on top, and two were ZnCdMgSe QW-based blue LEDs with Au coating or Au dots on top. Optical and carrier confinement properties were characterized by time-resolved and bias-dependent cathodoluminescence (CL) spectroscopy and imaging. Electrical behavior was characterized by I-V and electroluminescence (EL) measurements.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Cathodoluminescence from II-VI quantum well light emitting diodes.
LDR:03128nam 2200313 a 45 001 937663
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008 110511s2003 eng d
035 $a (UnM)AAI3086961
035 $a AAI3086961
040 $a UnM $c UnM
100 1 $a Nikiforov, Alexey Yuriyevich. $3 1261525
245 1 0 $a Cathodoluminescence from II-VI quantum well light emitting diodes.
300 $a 174 p.
500 $a Adviser: G. S. Cargill, III.
500 $a Source: Dissertation Abstracts International, Volume: 64-04, Section: B, page: 1867.
502 $a Thesis (Ph.D.)--Lehigh University, 2003.
520 $a The objectives of the present research were to advance understanding of luminescence degradation, defects, and bias-dependent carrier confinement and transport in ZnCd(Mg)Se-based quantum well (QW) LED structures grown by molecular beam epitaxy. Most data were obtained from three LED samples. One was a ZnCdSe QW-based red LED with Au coating on top, and two were ZnCdMgSe QW-based blue LEDs with Au coating or Au dots on top. Optical and carrier confinement properties were characterized by time-resolved and bias-dependent cathodoluminescence (CL) spectroscopy and imaging. Electrical behavior was characterized by I-V and electroluminescence (EL) measurements.
520 $a Both reversible and irreversible effects of bias and electron bombardment on luminescence were observed. Reversible effects were QW CL energy shifts and QW CL intensity changes during bias cycling. No EL was detected from the blue LEDs. Irreversible effects were QW CL decreases for the red LED and QW CL intensity enhancements for the blue LEDs.
520 $a Reversible effects of bias on CL were simulated using a model incorporating generation and transport of excess carriers, overlap of the electron and hole wave functions, carrier escape, and competition between radiative and nonradiative processes. Ground state energy levels of carriers in the QW heterostructure were calculated in the effective mass and envelope function approximations. Modification of energy levels and wave functions by bias was calculated for both infinite and finite QWs.
520 $a The finite QW simulations predict the reversible bias-dependent CL intensity behaviors seen experimentally for both red and blue LEDs. The simulations predict qualitatively, but not quantitatively, the reversible photon energy shifts with bias for the red LED. The photon energy shifts for the blue LEDs differed in both direction and magnitude from the simulations.
520 $a The CL experiments have not established the cause of irreversible intensity decreases observed for the red LED during electron bombardment and bias cycling. Experiments suggest that the observed enhancements of CL intensity in the blue LEDs result from buildup of internal fields due to charges in preexisting or electron bombardment created traps.
590 $a School code: 0105.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0607
690 $a 0794
710 2 0 $a Lehigh University. $3 515436
773 0 $t Dissertation Abstracts International $g 64-04B.
790 $a 0105
790 1 0 $a Cargill, G. S., III, $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3086961