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MEMS and BST technologies for microw...
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Liu, Yu.
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MEMS and BST technologies for microwave applications.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
MEMS and BST technologies for microwave applications./
作者:
Liu, Yu.
面頁冊數:
127 p.
附註:
Chair: Robert A. York.
Contained By:
Dissertation Abstracts International63-09B.
標題:
Engineering, Electronics and Electrical. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3064743
ISBN:
0493838600
MEMS and BST technologies for microwave applications.
Liu, Yu.
MEMS and BST technologies for microwave applications.
- 127 p.
Chair: Robert A. York.
Thesis (Ph.D.)--University of California, Santa Barbara, 2002.
Both radio-frequency microelectromechanical systems (RF MEMS) and Barium Strontium Titanate (BST) ferroelectric thin films are emerging technologies with great promise for reducing cost and improving performance in modern microwave radar and communication applications. This work is aimed at developing and optimizing aspects of these technologies relevant to future commercial application, including device design, fabrication and processing, and microwave circuit demonstrations.
ISBN: 0493838600Subjects--Topical Terms:
626636
Engineering, Electronics and Electrical.
MEMS and BST technologies for microwave applications.
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Thesis (Ph.D.)--University of California, Santa Barbara, 2002.
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Both radio-frequency microelectromechanical systems (RF MEMS) and Barium Strontium Titanate (BST) ferroelectric thin films are emerging technologies with great promise for reducing cost and improving performance in modern microwave radar and communication applications. This work is aimed at developing and optimizing aspects of these technologies relevant to future commercial application, including device design, fabrication and processing, and microwave circuit demonstrations.
520
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Detailed processing techniques and fabrication concerns of RF MEMS switches using a surface micromachining technique are investigated in order to improve the switching performance with reasonable DC bias control. Problems regarding the design of RF MEMS switches for improved yield and reliability are also addressed. The high performance of RF MEMS switch promises it to be used to fabricate low cost, high-performance microwave control circuits, such as SPDT switches, digital phase shifters, and tunable filters.
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In recent years, ferroelectric technologies have received extensive attention because of their suitability for tunable microwave applications. BST ferroelectric thin film and device properties are investigated for microwave tuning and control applications. Interdigital device structure is optimized to minimize device loss and maintain good tunability. These BST interdigital capacitors are used in varactor-loaded transmission line to obtain low loss distributed phase shifters.
520
$a
Based on the above work, BST thin films are used to replace traditional silicon nitride dielectric in RF MEMS switches for high-isolation and broadband applications. The high dielectric constant of BST thin film results in both higher isolation and smaller device size for RF MEMS switches. An excellent isolation of more than 30dB is obtained in a wide frequency range from 16GHz to 36GHz.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3064743
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