東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Exchange biased and closed-flux pseu...

Bae, Seongtae.

FindBook

Google Book

Amazon

博客來

Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability./
作者:	Bae, Seongtae.
面頁冊數:	260 p.
附註:	Adviser: Jack H. Judy.
Contained By:	Dissertation Abstracts International64-03B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3083263

Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability.
Bae, Seongtae.

Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability. - 260 p.

Adviser: Jack H. Judy.

Thesis (Ph.D.)--University of Minnesota, 2003.

Since giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) spinvalve effects were developed for the last two decades after discovered, world wide researches on applying these effects for various kinds of solid state active devices has provided a strong impact on challenging new functional micro-magnetoelectronic devices. In particular, recently developed nano-structured magnetic spin-valve thin film materials for spin-electronic devices are now considered as building blocks of state-of-the-art electronic engineering.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability.
LDR:03481nam 2200289 a 45 001 934699
005 20110509
008 110509s2003 eng d
035 $a (UnM)AAI3083263
035 $a AAI3083263
040 $a UnM $c UnM
100 1 $a Bae, Seongtae. $3 1258398
245 1 0 $a Exchange biased and closed-flux pseudo spin-valve materials, device applications, and electrical reliability.
300 $a 260 p.
500 $a Adviser: Jack H. Judy.
500 $a Source: Dissertation Abstracts International, Volume: 64-03, Section: B, page: 1390.
502 $a Thesis (Ph.D.)--University of Minnesota, 2003.
520 $a Since giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) spinvalve effects were developed for the last two decades after discovered, world wide researches on applying these effects for various kinds of solid state active devices has provided a strong impact on challenging new functional micro-magnetoelectronic devices. In particular, recently developed nano-structured magnetic spin-valve thin film materials for spin-electronic devices are now considered as building blocks of state-of-the-art electronic engineering.
520 $a This research has been concentrated on developing and designing magneto-electronic solid state devices with high thermal and electrical stability using an α-Fe 2O3 and NiO oxide anti-ferromagnetic exchange biased GMR bottom spin-valves (BSV), NiFe/Cu/Co and NiFe/Cu/CoFe based closed-flux metallic pseudo spin-valves, and PtMn exchange biased TMR spin-valves. The category covering this research is divided into four main research steps. First is to investigate exchange bias coupling characteristics of α-Fe2 O3 and NiO oxide Anti-ferromagnetic materials (AF)/Ferromagnetic (F) layer systems for optimizing exchange biased BSV and to study magnetic properties of various kinds of magnetic thin films including single through multi-layered structures for the fundamental research on NiFe/Cu/Co and NiFe/Cu/CoFe closed-flux metallic pseudo spin-valves. Second is to develop and improve new kinds of BSVs and closed-flux metallic spinvalves by controlling process parameters in terms of crystalline orientation texture of AF and F layers, interfacial surface roughness, grain size (its size distribution), chemical composition, and kinetics of sputtering film growth. Third is to design, to fabricate, and to investigate the magnetic and electrical properties of magneto-electronic devices as well as their applications such as GMR magnetoresistive random access memory (MRAM), GMR read head, TMR read head, and new kinds of GMR solid state devices, which can be promisingly substituted for current microelectronic devices. Finally, the last is to focus on studying electrical reliability of GMR read sensor and GMR MRAM cell in terms of electromigration-induced failures of various kinds of magnetic thin films, which are currently used in GMR spin-valve materials, and is to investigate the effects of current (or voltage) induced dielectric breakdown in aluminum oxide tunnel barrier under various testing conditions on the electrical stability of real TMR read sensors.
590 $a School code: 0130.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
690 $a 0794
710 2 0 $a University of Minnesota. $3 676231
773 0 $t Dissertation Abstracts International $g 64-03B.
790 $a 0130
790 1 0 $a Judy, Jack H., $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3083263