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Study of sputtered nitride films.

Chen, Hong.

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Study of sputtered nitride films.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Study of sputtered nitride films./
作者:	Chen, Hong.
面頁冊數:	100 p.
附註:	Director: Martin E. Kordesch.
Contained By:	Dissertation Abstracts International61-09B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9989106
ISBN:	0599962402

Study of sputtered nitride films.
Chen, Hong.

Study of sputtered nitride films. - 100 p.

Director: Martin E. Kordesch.

Thesis (Ph.D.)--Ohio University, 2000.

AlN and GaN thin films were successfully grown using reactive magnetron sputtering. The structural and optical properties of the nitride films have been studied. The films are highly transparent. The crystal structure varies from micro crystalline to amorphous depending on the substrate temperature during the deposition.

ISBN: 0599962402Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Study of sputtered nitride films.
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100 1 $a Chen, Hong. $3 757561
245 1 0 $a Study of sputtered nitride films.
300 $a 100 p.
500 $a Director: Martin E. Kordesch.
500 $a Source: Dissertation Abstracts International, Volume: 61-09, Section: B, page: 4785.
502 $a Thesis (Ph.D.)--Ohio University, 2000.
520 $a AlN and GaN thin films were successfully grown using reactive magnetron sputtering. The structural and optical properties of the nitride films have been studied. The films are highly transparent. The crystal structure varies from micro crystalline to amorphous depending on the substrate temperature during the deposition.
520 $a One of the important aspects of this research is the cryogenic growth of amorphous nitride films. The substrates were cooled using liquid nitrogen during the growth. Truly amorphous nitride films were obtained in contrast to the microcrystalline films grown at room temperature or higher. The highly transparent amorphous films indicate an unusual clean mid-bandgap of the material, which is confirmed by theoretical calculation.
520 $a Rare earth element Er was doped into the nitride films by co-sputtering. The light emission properties of the Er-doped nitrides were studied using photoluminescence and cathodoluminescence. Characteristic light emissions related to the Er<super>3+</super> ions were observed. The results show the suitability of the materials for potential applications of light-emitting devices.
520 $a Finally, bandgap engineering of amorphous AlN/GaN alloy were studied. AlN and GaN were co-sputtered at cryogenic substrate temperature. The alloy films are highly transparent. The optical bandgap energy shows a near-linear relation with the alloy composition. The theoretical <italic> ab initio</italic> molecular dynamic calculation gives a state-free bandgap. The calculated results of bandgap energy are in close agreement with the experiment.
590 $a School code: 0167.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0611
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710 2 0 $a Ohio University. $3 626637
773 0 $t Dissertation Abstracts International $g 61-09B.
790 $a 0167
790 1 0 $a Kordesch, Martin E., $e advisor
791 $a Ph.D.
792 $a 2000
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