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Wide bandgap magnesium zinc oxide se...

Yang, Wei.

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Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors./
作者:	Yang, Wei.
面頁冊數:	260 p.
附註:	Chair: Thirumalai Venkatesan.
Contained By:	Dissertation Abstracts International64-03B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3080284

Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.
Yang, Wei.

Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors. - 260 p.

Chair: Thirumalai Venkatesan.

Thesis (Ph.D.)--University of Maryland College Park, 2002.

Research on MgxZn1−xO (χ = 0&sim;1) represents long-lasting efforts of searching for suitable wide-bandgap semiconductors for ultraviolet optoelectronic applications. With a tunable direct bandgap of 3.27&sim;7.8 eV and excellent material properties, especially the large exciton binding energy (60 meV) that enables low-threshold stimulated emission, MgxZn1−xO is believed to be one of the most promising optoelectronic materials for semiconductor ultraviolet lasers and photodetectors. The objective of this dissertation is to provide an in-depth picture of this oxide semiconductor, and to explore its potential applications in the scope of ultraviolet optoelectronics.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.
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035 $a (UnM)AAI3080284
035 $a AAI3080284
040 $a UnM $c UnM
100 1 $a Yang, Wei. $3 1257167
245 1 0 $a Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.
300 $a 260 p.
500 $a Chair: Thirumalai Venkatesan.
500 $a Source: Dissertation Abstracts International, Volume: 64-03, Section: B, page: 1421.
502 $a Thesis (Ph.D.)--University of Maryland College Park, 2002.
520 $a Research on MgxZn1−xO (χ = 0&sim;1) represents long-lasting efforts of searching for suitable wide-bandgap semiconductors for ultraviolet optoelectronic applications. With a tunable direct bandgap of 3.27&sim;7.8 eV and excellent material properties, especially the large exciton binding energy (60 meV) that enables low-threshold stimulated emission, MgxZn1−xO is believed to be one of the most promising optoelectronic materials for semiconductor ultraviolet lasers and photodetectors. The objective of this dissertation is to provide an in-depth picture of this oxide semiconductor, and to explore its potential applications in the scope of ultraviolet optoelectronics.
520 $a Single crystal MgxZn1−xO thin films were epitaxially grown on sapphire and silicon using pulsed laser deposition techniques. Large-scale deposition of MgxZn1−xO polycrystalline films on glass and polymer was also realized. The overall MgxZn 1−xO film quality improved significantly with the new target-making procedure and the optimized laser ablation conditions. By using combinatorial techniques, MgxZn1−xO thin films with continuously varying composition from ZnO to MgO were epitaxially grown on a single substrate. Characterizations of MgxZn1-xO composition spreads reveal a panoramic picture of the structural, electrical, and optical properties of MgxZn1−xO alloys and their evolution with film composition. Phase separation, bandgap discontinuity, solid solubility, and other application-related issues are discussed.
520 $a In view of the <italic>p</italic>-type doping challenge that impedes <italic> p-n</italic> junction based Mg<italic>x</italic>Zn1−xO devices, the optoelectronic applications of MgxZn1−xO thin films are focused on ultraviolet photodetectors with a metal-semiconductor-metal structure. Solar or visible-blind MgxZn1−xO photodetectors with high degree of visible rejection were fabricated on sapphire, glass, and silicon substrates. Large responsivity and moderate detection speed, which enable these MgxZn1−xO photodetectors to have a variety of practical applications, were realized. The mechanisms of photodetector internal gain and the relationship of carrier lifetime and photodetector response time are interpreted. Based on MgxZn1−xO composition spread thin films, wavelength-distinguishable ultraviolet photodetector arrays were also demonstrated. Each photodetector in the array has a unique composition-dependent photoresponse spectrum, which is consistent with the MgxZn 1−xO bandgap-composition relationship. The potential applications of using MgxZn1−xO photodetector arrays in ultraviolet spectral analyzing are also illustrated.
590 $a School code: 0117.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
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710 2 0 $a University of Maryland College Park. $3 1249734
773 0 $t Dissertation Abstracts International $g 64-03B.
790 $a 0117
790 1 0 $a Venkatesan, Thirumalai, $e advisor
791 $a Ph.D.
792 $a 2002
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3080284