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Chemical vapor deposition of pure an...
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Smith, Ryan Christopher.
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Chemical vapor deposition of pure and mixed group IV oxides from anhydrous metal nitrate precursors.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Chemical vapor deposition of pure and mixed group IV oxides from anhydrous metal nitrate precursors./
作者:
Smith, Ryan Christopher.
面頁冊數:
151 p.
附註:
Adviser: Wayne L. Gladfelter.
Contained By:
Dissertation Abstracts International63-07B.
標題:
Chemistry, Inorganic. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3058667
ISBN:
0493741100
Chemical vapor deposition of pure and mixed group IV oxides from anhydrous metal nitrate precursors.
Smith, Ryan Christopher.
Chemical vapor deposition of pure and mixed group IV oxides from anhydrous metal nitrate precursors.
- 151 p.
Adviser: Wayne L. Gladfelter.
Thesis (Ph.D.)--University of Minnesota, 2002.
As the gate length in field effect transistors continues to decrease the thickness of the SiO<sub>2</sub> gate oxide must also be scaled. Within the next decade this trend reaches an abrupt limit at ∼1.5 nm where tunneling leads to unacceptable leakage currents. One solution is to replace the current SiO<sub>2</sub> gate oxide with a material possessing a higher dielectric constant (κ). This thesis describes the chemical vapor deposition (CVD) of potential alternate gate oxides. The first project involved the CVD of thin films of ZrO<sub>2</sub> and HfO<sub>2</sub> from anhydrous Zr(NO<sub> 3</sub>)<sub>4</sub> and Hf(NO<sub>3</sub>)<sub>4</sub>. Films were characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), medium energy ion scattering (MEIS), and Xray photoelectron spectroscopy (XPS). In the second part of the thesis, the CVD of amorphous Ti<sub>x</sub>Si<sub>1−x</sub>O<sub> 2</sub> films from Si(OC<sub>2</sub>H<sub>5</sub>)<sub>4</sub> and either Ti(OCH(CH<sub>3</sub>)<sub>2</sub>)<sub>4</sub> or anhydrous Ti(NO<sub>3</sub>)<sub> 4</sub> is described. The composition of the films depended upon the choice of TiO<sub>2</sub> precursor. Explanations for the observation of precursor-controlled stoichiometry are outlined and discussed. The final project presented describes the development of combinatorial CVD techniques. Continuous compositional spreads of the TiO<sub>2</sub>-SnO<sub>2</sub>HfO<sub>2</sub> ternary system were deposited onto a single Si substrate using the corresponding nitrate precursors. Film characterization (RBS, XPS, XRD) and electrical characteristics (C-V, IN) were mapped relative to position within the sample. Using these combinatorial CVD methods, compositions in the TiO<sub>2</sub>-SnO<sub>2</sub>-HfO<sub> 2</sub> system were identified that possessed a high value of κ. Additionally, the presence of a unique composition (Hf<sub>0.69</sub>Sn<sub>0.31</sub>O<sub> 2</sub>) that crystallizes in the orthorhombic α-PbO<sub>2</sub> phase was observed.
ISBN: 0493741100Subjects--Topical Terms:
517253
Chemistry, Inorganic.
Chemical vapor deposition of pure and mixed group IV oxides from anhydrous metal nitrate precursors.
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As the gate length in field effect transistors continues to decrease the thickness of the SiO<sub>2</sub> gate oxide must also be scaled. Within the next decade this trend reaches an abrupt limit at ∼1.5 nm where tunneling leads to unacceptable leakage currents. One solution is to replace the current SiO<sub>2</sub> gate oxide with a material possessing a higher dielectric constant (κ). This thesis describes the chemical vapor deposition (CVD) of potential alternate gate oxides. The first project involved the CVD of thin films of ZrO<sub>2</sub> and HfO<sub>2</sub> from anhydrous Zr(NO<sub> 3</sub>)<sub>4</sub> and Hf(NO<sub>3</sub>)<sub>4</sub>. Films were characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), medium energy ion scattering (MEIS), and Xray photoelectron spectroscopy (XPS). In the second part of the thesis, the CVD of amorphous Ti<sub>x</sub>Si<sub>1−x</sub>O<sub> 2</sub> films from Si(OC<sub>2</sub>H<sub>5</sub>)<sub>4</sub> and either Ti(OCH(CH<sub>3</sub>)<sub>2</sub>)<sub>4</sub> or anhydrous Ti(NO<sub>3</sub>)<sub> 4</sub> is described. The composition of the films depended upon the choice of TiO<sub>2</sub> precursor. Explanations for the observation of precursor-controlled stoichiometry are outlined and discussed. The final project presented describes the development of combinatorial CVD techniques. Continuous compositional spreads of the TiO<sub>2</sub>-SnO<sub>2</sub>HfO<sub>2</sub> ternary system were deposited onto a single Si substrate using the corresponding nitrate precursors. Film characterization (RBS, XPS, XRD) and electrical characteristics (C-V, IN) were mapped relative to position within the sample. Using these combinatorial CVD methods, compositions in the TiO<sub>2</sub>-SnO<sub>2</sub>-HfO<sub> 2</sub> system were identified that possessed a high value of κ. Additionally, the presence of a unique composition (Hf<sub>0.69</sub>Sn<sub>0.31</sub>O<sub> 2</sub>) that crystallizes in the orthorhombic α-PbO<sub>2</sub> phase was observed.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3058667
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