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Semiconductor optical 1 x N tapered ...
~
Choi, Samuel Sungshik.
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Semiconductor optical 1 x N tapered amplifier power splitter device.
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Semiconductor optical 1 x N tapered amplifier power splitter device./
Author:
Choi, Samuel Sungshik.
Description:
232 p.
Notes:
Source: Dissertation Abstracts International, Volume: 60-10, Section: B, page: 5126.
Contained By:
Dissertation Abstracts International60-10B.
Subject:
Engineering, Electronics and Electrical. -
Online resource:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9949448
ISBN:
0599517042
Semiconductor optical 1 x N tapered amplifier power splitter device.
Choi, Samuel Sungshik.
Semiconductor optical 1 x N tapered amplifier power splitter device.
- 232 p.
Source: Dissertation Abstracts International, Volume: 60-10, Section: B, page: 5126.
Thesis (Ph.D.)--University of Massachusetts Lowell, 1999.
Currently, extensive efforts are being made world wide to develop photonic devices capable of multifunctionality for advanced network systems. These systems at 1.3 μm and 1.5 μm require a combination of transmitters, optical amplifiers, splitters, and switches with high speed, bandwidth, and gain. One device of particular interest is a splitter that is used to broadcast or to simultaneously route a signal to a number of ports or subscribers (1 x N and N x N splitting). Various deigns have been proposed such as cascaded Y-Branch and multimode interference devices. Passive splitters require pre-and/or post-amplification to compensate for splitting loss. For 1 x N splitters with large N, power saturation effects in single-mode amplifiers limit pre-amplification so post-amplification is also usually required. Post-amplification; however, adds noise to the outputs and fails to alleviate the signal-to-noise ratios approaching that of the pre-amplification case without power saturation effects.
ISBN: 0599517042Subjects--Topical Terms:
626636
Engineering, Electronics and Electrical.
Semiconductor optical 1 x N tapered amplifier power splitter device.
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Semiconductor optical 1 x N tapered amplifier power splitter device.
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232 p.
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Source: Dissertation Abstracts International, Volume: 60-10, Section: B, page: 5126.
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Supervisors: William D. Goodhue; Joseph P. Donnelly.
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Thesis (Ph.D.)--University of Massachusetts Lowell, 1999.
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Currently, extensive efforts are being made world wide to develop photonic devices capable of multifunctionality for advanced network systems. These systems at 1.3 μm and 1.5 μm require a combination of transmitters, optical amplifiers, splitters, and switches with high speed, bandwidth, and gain. One device of particular interest is a splitter that is used to broadcast or to simultaneously route a signal to a number of ports or subscribers (1 x N and N x N splitting). Various deigns have been proposed such as cascaded Y-Branch and multimode interference devices. Passive splitters require pre-and/or post-amplification to compensate for splitting loss. For 1 x N splitters with large N, power saturation effects in single-mode amplifiers limit pre-amplification so post-amplification is also usually required. Post-amplification; however, adds noise to the outputs and fails to alleviate the signal-to-noise ratios approaching that of the pre-amplification case without power saturation effects.
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In this work, a first generation of 1 x N tapered amplifier power splitter (TAPS) was developed to study the feasibility of amplifying signals during the spitting process. The TAPS device equally splits the signal from an input guide into N output guides using a 2D-slab waveguide diffraction region. This region also serves as a tapered amplifier. The first working prototypes of this novel device technology, 1 x 8 and 1 x 16 all-active 1.3 μm wavelength TAPS devices, with gains as high as 14 dB per output channel, are reported.
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The dissertation details the design, fabrication, packaging, and testing the 1 x 8 and 1 x 16 TAPS devices and shows that with straight-forward evolutionary modifications to the initial design, 1 x 32 and 1 x 64 devices with significant gain per output channel are feasible.
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School code: 0111.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9949448
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