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Radiation effects on III-V heterostr...

Jun, Bongim.

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Radiation effects on III-V heterostructure devices.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Radiation effects on III-V heterostructure devices./
Author:	Jun, Bongim.
Description:	215 p.
Notes:	Adviser: S. Subramanian.
Contained By:	Dissertation Abstracts International63-08B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3061898
ISBN:	0493777296

Radiation effects on III-V heterostructure devices.
Jun, Bongim.

Radiation effects on III-V heterostructure devices. - 215 p.

Adviser: S. Subramanian.

Thesis (Ph.D.)--Oregon State University, 2003.

The neutron and electron radiation effects in III-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are <italic>AlGaAs/GaAs</italic> high electron mobility transistors (HEMTs), <italic>AlGaAs/InGaAs/GaAs</italic> heterostructure insulated gate field effect transistors (HIGFETs), and <italic>InP/InGaAs/InGaAs</italic> single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation-induced degradation effects in HEMTs and HIGFETs are developed.

ISBN: 0493777296Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Radiation effects on III-V heterostructure devices.
LDR:03284nam 2200301 a 45 001 925926
005 20110419
008 110419s2003 eng d
020 $a 0493777296
035 $a (UnM)AAI3061898
035 $a AAI3061898
040 $a UnM $c UnM
100 1 $a Jun, Bongim. $3 1249426
245 1 0 $a Radiation effects on III-V heterostructure devices.
300 $a 215 p.
500 $a Adviser: S. Subramanian.
500 $a Source: Dissertation Abstracts International, Volume: 63-08, Section: B, page: 3845.
502 $a Thesis (Ph.D.)--Oregon State University, 2003.
520 $a The neutron and electron radiation effects in III-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are <italic>AlGaAs/GaAs</italic> high electron mobility transistors (HEMTs), <italic>AlGaAs/InGaAs/GaAs</italic> heterostructure insulated gate field effect transistors (HIGFETs), and <italic>InP/InGaAs/InGaAs</italic> single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation-induced degradation effects in HEMTs and HIGFETs are developed.
520 $a The most prominent radiation effects appearing on both HEMT and HIGFET devices are increase of threshold voltage (<italic>VT</italic>) and decrease of transconductance (<italic>gm</italic>) as radiation dose increases. These effects are responsible for drain current degradation under given bias conditions after irradiation. From our experimental neutron irradiation study and our theoretical models, we concluded that threshold voltage increase is due to the radiation-induced acceptor-like (negatively charged) traps in the GaAs channel region removing carriers. The mobility degradation in the channel is responsible for <italic>gm</italic> decrease. Series resistance increase is also related to carrier removal and mobility degradation. Traps introduced in the GaAs region affect the device performance more than the traps in the AlGaAs doped region. <italic>V T</italic> and <italic>gm</italic> of HIGFET devices are less affected by neutron radiation than they are in HEMTs. This difference is attributed to different shapes of the quantum well in the two devices.
520 $a The main effects of electron and neutron irradiation of SHBTs are decrease of collector current (<italic>IC</italic>), decrease of common-emitter DC gain, increase of the collector output conductance (<italic>ΔI C/ΔVCE</italic>), and increase of collector-collector offset voltage. The decrease of breakdown voltage of reverse biased base-emitter junction diode is responsible for increasing the output conductance after irradiation. Base-collector junction degradation also induces collector-emitter offset voltage increase.
590 $a School code: 0172.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Radiation. $3 1019212
690 $a 0544
690 $a 0756
710 2 0 $a Oregon State University. $3 625720
773 0 $t Dissertation Abstracts International $g 63-08B.
790 $a 0172
790 1 0 $a Subramanian, S., $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3061898