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Electrostatic (Langmuir) probe measu...
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University of Kansas., Electrical Engineering & Computer Science.
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Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas ./
作者:
Pathak, Bogdan Amaru.
面頁冊數:
170 p.
附註:
Advisers: Karen J. Nordheden; Rongqing Hui.
Contained By:
Masters Abstracts International47-01.
標題:
Engineering, Electronics and Electrical. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1454295
ISBN:
9780549650973
Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
Pathak, Bogdan Amaru.
Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
- 170 p.
Advisers: Karen J. Nordheden; Rongqing Hui.
Thesis (M.S.)--University of Kansas, 2008.
A Langmuir probe diagnostic system was developed to measure the electron density distribution in BCl3/N2 mixtures to determine if an average electron energy increase might be partially responsible for the previously observed etch rate enhancement of GaAs with nitrogen addition. The system was validated in both helium and nitrogen plasmas. Probe measurements showed that as the nitrogen concentration in BCl3/N2 plasmas increased, the average electron energy actually decreased (5.52 eV 0% N2, 4.14 eV 30% N2, and 3.69 eV 60% N 2). However, an increase in negative ion density was observed with nitrogen addition reaching a maximum at 40% N2. Although negative ions play no role in etching, this trend seems to correlate with the observed etch rate enhancement. A plausible explanation for both the increase in etch species and the increase in negative ion density is an increase in dissociation due to energy transfer from N2 metastables.
ISBN: 9780549650973Subjects--Topical Terms:
626636
Engineering, Electronics and Electrical.
Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
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Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
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170 p.
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Advisers: Karen J. Nordheden; Rongqing Hui.
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Source: Masters Abstracts International, Volume: 47-01, page: 0508.
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A Langmuir probe diagnostic system was developed to measure the electron density distribution in BCl3/N2 mixtures to determine if an average electron energy increase might be partially responsible for the previously observed etch rate enhancement of GaAs with nitrogen addition. The system was validated in both helium and nitrogen plasmas. Probe measurements showed that as the nitrogen concentration in BCl3/N2 plasmas increased, the average electron energy actually decreased (5.52 eV 0% N2, 4.14 eV 30% N2, and 3.69 eV 60% N 2). However, an increase in negative ion density was observed with nitrogen addition reaching a maximum at 40% N2. Although negative ions play no role in etching, this trend seems to correlate with the observed etch rate enhancement. A plausible explanation for both the increase in etch species and the increase in negative ion density is an increase in dissociation due to energy transfer from N2 metastables.
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