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Modeling, design, and characterizati...

University of Central Florida.

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Modeling, design, and characterization of monolithic bi-directional power semiconductor switch.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Modeling, design, and characterization of monolithic bi-directional power semiconductor switch./
Author:	Fu, Yue.
Description:	170 p.
Notes:	Adviser: Z. John Shen.
Contained By:	Dissertation Abstracts International68-12B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3295114
ISBN:	9780549401025

Modeling, design, and characterization of monolithic bi-directional power semiconductor switch.
Fu, Yue.

Modeling, design, and characterization of monolithic bi-directional power semiconductor switch. - 170 p.

Adviser: Z. John Shen.

Thesis (Ph.D.)--University of Central Florida, 2007.

Bidirectional power switching devices are needed in many power management applications, particularly in lithium-ion battery protection circuitry. A monolithic bidirectional power switch fabricated with a simplified CMOS technology is introduced in this dissertation. Throughout the design process, ISE TCAD tool plays an important role. Design variables are carefully analyzed to improve the device performance or yield the best trade off. Optimization is done with the help of TCAD simulation and theoretical calculations.

ISBN: 9780549401025Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Modeling, design, and characterization of monolithic bi-directional power semiconductor switch.
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020 $a 9780549401025
035 $a (UMI)AAI3295114
035 $a AAI3295114
040 $a UMI $c UMI
100 1 $a Fu, Yue. $3 1058456
245 1 0 $a Modeling, design, and characterization of monolithic bi-directional power semiconductor switch.
300 $a 170 p.
500 $a Adviser: Z. John Shen.
500 $a Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8248.
502 $a Thesis (Ph.D.)--University of Central Florida, 2007.
520 $a Bidirectional power switching devices are needed in many power management applications, particularly in lithium-ion battery protection circuitry. A monolithic bidirectional power switch fabricated with a simplified CMOS technology is introduced in this dissertation. Throughout the design process, ISE TCAD tool plays an important role. Design variables are carefully analyzed to improve the device performance or yield the best trade off. Optimization is done with the help of TCAD simulation and theoretical calculations.
520 $a The device has been successfully fabricated using simplified 0.5 micron CMOS process. The experimental result shows a breakdown voltage of 25V. Due to the interdigitated source to source design, the inter-terminal current flowing path is effectively reduced to a few microns. The experimental result shows an ultra low specific on resistance. In comparison with other bidirectional power semiconductor switches by some major semiconductor manufacturers, the proposed BDS device has less than one half of the specific on resistance, thus substantially lower on state power loss of the switch.
520 $a The proposed BDS device has a unique NPNPN structure, in comparison with NPNP structure, which is the analytical structure for CMOS latch-up, the proposed device inherently exhibits a better latch up immunity than CMOS inverter, thanks to the negative feed back mechanism of the extra NPN parasitic BJT transistor.
520 $a In order to implement the device into simulators like PSPICE or Cadence IC Design, a compact model named variable resistance model has been built. This simple analytical model fits quite well with experimental data, and can be easily implemented by Verilog-A or other hardware description languages. Also, macro modeling is possible provided that the model parameters can be extracted from experimental curves.
520 $a Several advanced types of BDS devices have been proposed, they exceed the basic BDS design in terms of breakdown voltage and/or on resistance. These advanced structures may be prominent for further improvement of the basic BDS device to a higher extend. Some cell phone providers such as Nokia is already asking for higher breakdown voltage of BDS device, due to the possibility of incidentally insert the battery pack into the cell phone with wrong pin polarity. Hopefully, the basic BDS design or one of these advanced types may eventually be implemented into the leading brand cell phone battery packs.
590 $a School code: 0705.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a University of Central Florida. $3 1018467
773 0 $t Dissertation Abstracts International $g 68-12B.
790 $a 0705
790 1 0 $a Shen, Z. John, $e advisor
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3295114