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Growth and high rate reactive ion et...

Northeastern University., Electrical and Computer Engineering.

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Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates./
Author:	Chen, Zhaohui.
Description:	122 p.
Notes:	Adviser: Vincent G. Harris.
Contained By:	Dissertation Abstracts International69-12B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3339216
ISBN:	9780549949688

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates.
Chen, Zhaohui.

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates. - 122 p.

Adviser: Vincent G. Harris.

Thesis (Ph.D.)--Northeastern University, 2009.

These demonstrations enable the future integration of ferrites into MIC devices and technologies.

ISBN: 9780549949688Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates.
LDR:03741nmm 2200337 a 45 001 886612
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008 101007s2009 ||||||||||||||||| ||eng d
020 $a 9780549949688
035 $a (UMI)AAI3339216
035 $a AAI3339216
040 $a UMI $c UMI
100 1 $a Chen, Zhaohui. $3 677431
245 1 0 $a Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates.
300 $a 122 p.
500 $a Adviser: Vincent G. Harris.
500 $a Source: Dissertation Abstracts International, Volume: 69-12, Section: B, page: 7695.
502 $a Thesis (Ph.D.)--Northeastern University, 2009.
520 $a These demonstrations enable the future integration of ferrites into MIC devices and technologies.
520 $a Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs).
520 $a This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques.
520 $a To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 kG, and ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe. This combination of properties qualifies these films for microwave device applications. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of mu-wave and mm-wave monolithic integrated circuits. In part two, high-rate reactive ion etching using CHF3/SF6 gas mixtures was successfully demonstrated on BaM films, resulting in high aspect profile features of less than 50 nm in lateral dimension.
590 $a School code: 0160.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0544
690 $a 0794
710 2 $a Northeastern University. $b Electrical and Computer Engineering. $3 1018491
773 0 $t Dissertation Abstracts International $g 69-12B.
790 $a 0160
790 1 0 $a Harris, Vincent G., $e advisor
790 1 0 $a Vittoria, Carmine $e committee member
790 1 0 $a Ziemer, Katherine S. $e committee member
791 $a Ph.D.
792 $a 2009
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3339216