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Nanolithography and nanofabrication ...

University of Illinois at Urbana-Champaign.

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Nanolithography and nanofabrication using hydrogen silsesquioxane resists.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Nanolithography and nanofabrication using hydrogen silsesquioxane resists./
作者:	Choi, Soo Kyung.
面頁冊數:	106 p.
附註:	Adviser: Ilesanmi Adesida.
Contained By:	Dissertation Abstracts International70-06B.
標題:	Computer Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3362755
ISBN:	9781109218657

Nanolithography and nanofabrication using hydrogen silsesquioxane resists.
Choi, Soo Kyung.

Nanolithography and nanofabrication using hydrogen silsesquioxane resists. - 106 p.

Adviser: Ilesanmi Adesida.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.

Tremendous interest in nanotechnology has required versatile patterning tools for the fabrication of nanometer-scale structures with high precision and electron-beam lithography (EBL) has been widely used for this purpose. Hydrogen silsesquioxane (HSQ) has received much attention as a new class of negative-tone electron-beam resist. Due to its high resolution and excellent etch resistance, HSQ resist has proven to be very useful in various nanofabrication processes. The focus of this thesis has been on the development of EBL processes and the investigations of material aspects of HSQ resists. For resolution enhancement, the effects of developer temperatures and substrates have been examined. By increasing resist contrast or reducing the effects of backscattered electrons, high quality of ultra-dense nanostructures have been realized. The changes in chemical structures and properties of thermally cured and electron-beam-exposed HSQ films have been characterized to achieve the optimized processing. Development characteristics and etching properties have been comparatively studied. Furthermore, spatial characterization has been performed to identify chemical reactions in HSQ resists during electron-beam exposure. As a possible application of HSQ nanostructures, triangular nanochannels fabricated using the resists collapse technique have been demonstrated.

ISBN: 9781109218657Subjects--Topical Terms:

626642
Computer Science.

Nanolithography and nanofabrication using hydrogen silsesquioxane resists.
LDR:02291nmm 2200289 a 45 001 874367
005 20100824
008 100824s2009 ||||||||||||||||| ||eng d
020 $a 9781109218657
035 $a (UMI)AAI3362755
035 $a AAI3362755
040 $a UMI $c UMI
100 1 $a Choi, Soo Kyung. $3 1043636
245 1 0 $a Nanolithography and nanofabrication using hydrogen silsesquioxane resists.
300 $a 106 p.
500 $a Adviser: Ilesanmi Adesida.
500 $a Source: Dissertation Abstracts International, Volume: 70-06, Section: B, page: .
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.
520 $a Tremendous interest in nanotechnology has required versatile patterning tools for the fabrication of nanometer-scale structures with high precision and electron-beam lithography (EBL) has been widely used for this purpose. Hydrogen silsesquioxane (HSQ) has received much attention as a new class of negative-tone electron-beam resist. Due to its high resolution and excellent etch resistance, HSQ resist has proven to be very useful in various nanofabrication processes. The focus of this thesis has been on the development of EBL processes and the investigations of material aspects of HSQ resists. For resolution enhancement, the effects of developer temperatures and substrates have been examined. By increasing resist contrast or reducing the effects of backscattered electrons, high quality of ultra-dense nanostructures have been realized. The changes in chemical structures and properties of thermally cured and electron-beam-exposed HSQ films have been characterized to achieve the optimized processing. Development characteristics and etching properties have been comparatively studied. Furthermore, spatial characterization has been performed to identify chemical reactions in HSQ resists during electron-beam exposure. As a possible application of HSQ nanostructures, triangular nanochannels fabricated using the resists collapse technique have been demonstrated.
590 $a School code: 0090.
650 4 $a Computer Science. $3 626642
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, General. $3 1020744
690 $a 0537
690 $a 0544
690 $a 0984
710 2 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 70-06B.
790 $a 0090
790 1 0 $a Adesida, Ilesanmi, $e advisor
791 $a Ph.D.
792 $a 2009
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3362755