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Growth and characterization of galli...

University of Arkansas.

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Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films./
作者:	Desikan, Rangaprasad.
面頁冊數:	80 p.
附註:	Source: Masters Abstracts International, Volume: 46-03, page: 1550.
Contained By:	Masters Abstracts International46-03.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1450882
ISBN:	9780549361411

Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films.
Desikan, Rangaprasad.

Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films. - 80 p.

Source: Masters Abstracts International, Volume: 46-03, page: 1550.

Thesis (M.S.)--University of Arkansas, 2007.

The past few decades has witnessed an exponential growth in computing power and information processing due to the rapid scaling of semiconductor devices. Such an amazing rate of growth is expected to encounter its limit when component sizes reach the atomic regime. Quantum Dots (QD) may be used for applications such as quantum computing, lasers and optical sensors.

ISBN: 9780549361411Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films.
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100 1 $a Desikan, Rangaprasad. $3 1036066
245 1 0 $a Growth and characterization of gallium arsenide quantum dots on strontium titanate thin films.
300 $a 80 p.
500 $a Source: Masters Abstracts International, Volume: 46-03, page: 1550.
502 $a Thesis (M.S.)--University of Arkansas, 2007.
520 $a The past few decades has witnessed an exponential growth in computing power and information processing due to the rapid scaling of semiconductor devices. Such an amazing rate of growth is expected to encounter its limit when component sizes reach the atomic regime. Quantum Dots (QD) may be used for applications such as quantum computing, lasers and optical sensors.
520 $a In the past decade, quantum dots grown have been grown over a variety of materials and their properties have been tested for device fabrication. Earlier work involved the use of Stranski-Krastanov (SK) method and Metal-Organic Chemical Vapor Deposition (MOCVD) Techniques employed for the same cause. However, the growth of QDs over ferroelectric materials using Droplet Epitaxy (DE) method has not been explored earlier. The recent use of this method has shown potential to achieve local ordering of quantum nanostructures and hence more control in growth.
520 $a This work focuses on growth and characterization of Gallium Arsenide Quantum dots over Strontium Titanate, a Ferroelectric material with unique properties. There has been little reported use of SrTiO3 as a substrate for QD growth using DE method in literature. The QDs formed over the chosen substrate promises to have significantly different properties like optical behavior that could have a potential impact on the electronics industry. A detailed description of the theory behind growth and experimental analysis is presented in this thesis. The quality of the GaAs Quantum dots grown over SrTiO3 substrates as determined from the experimental results is then discussed. The last part of this research work draws conclusion, illustrates the original contribution of this work and gives future directions.
590 $a School code: 0011.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Molecular. $3 1018648
690 $a 0609
690 $a 0611
710 2 $a University of Arkansas. $3 1017562
773 0 $t Masters Abstracts International $g 46-03.
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791 $a M.S.
792 $a 2007
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