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Structural and electronic properties...

Arizona State University.

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Structural and electronic properties of nitride semiconductors for solid-state lighting.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Structural and electronic properties of nitride semiconductors for solid-state lighting./
Author:	Wu, Zhihao.
Description:	137 p.
Notes:	Source: Dissertation Abstracts International, Volume: 69-10, Section: B, page: 6171.
Contained By:	Dissertation Abstracts International69-10B.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3335264
ISBN:	9780549887843

Structural and electronic properties of nitride semiconductors for solid-state lighting.
Wu, Zhihao.

Structural and electronic properties of nitride semiconductors for solid-state lighting. - 137 p.

Source: Dissertation Abstracts International, Volume: 69-10, Section: B, page: 6171.

Thesis (Ph.D.)--Arizona State University, 2008.

In this dissertation, the structural, electronic, and optoelectronic properties of polar and non-polar III-nitride semiconductors have been investigated using transmission electron microscopy, electron holography, and cathodoluminescence. The combination of these techniques has allowed the achievement of close correlation between structural, electronic and optical properties at nanometer scale. Among the results reported in this dissertation, first of all, the rapid decrease in luminescence of single indium gallium nitride (InGaN) quantum wells with indium composition is found to be due to increasing non-radiative recombination centers, in addition to stronger piezoelectric fields. Second, the strength of the piezoelectric fields in InGaN quantum wells in green LEDs is found to depend strongly on the proximity of the quantum well to the p-n junction. Third, the variation of electrostatic potential across a heterostructure of aluminum gallium nitride (AlGaN) and gallium-nitride (GaN) with an aluminum nitride (AlN) interlayer has been profiled. It is found that the ionized donor-like surface states of the AlGaN play a dominant role in compensating the polarization charges and thus become the major source of the two dimensional electron gas. Fourth, the electronic band structure for a modulation-doped AlGaN/AIN/GaN superlattice with graded AlGaN barriers reveals that the nominally linear grading of the AlGaN barrier layers results in a parabolic profile in aluminum composition. Fifth, a comparison of the properties of a-plane GaN grown on various substrates reveals a high density of short stacking faults for direct growth on r-sapphire, a much lower density of longer faults for growth laterally over the amorphous mask, and no faults for growth on a-plane GaN bulk substrates. Finally, the role of buffer layer (BL) thickness on the formation of stacking faults in a-plane GaN grown on r-sapphire has been studied, showing the density of stacking faults is minimized in the optimized BL thickness of 30 nm. The results reported in this dissertation should contribute to the realization of more efficient solid-state lighting technologies.

ISBN: 9780549887843Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Structural and electronic properties of nitride semiconductors for solid-state lighting.
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245 1 0 $a Structural and electronic properties of nitride semiconductors for solid-state lighting.
300 $a 137 p.
500 $a Source: Dissertation Abstracts International, Volume: 69-10, Section: B, page: 6171.
502 $a Thesis (Ph.D.)--Arizona State University, 2008.
520 $a In this dissertation, the structural, electronic, and optoelectronic properties of polar and non-polar III-nitride semiconductors have been investigated using transmission electron microscopy, electron holography, and cathodoluminescence. The combination of these techniques has allowed the achievement of close correlation between structural, electronic and optical properties at nanometer scale. Among the results reported in this dissertation, first of all, the rapid decrease in luminescence of single indium gallium nitride (InGaN) quantum wells with indium composition is found to be due to increasing non-radiative recombination centers, in addition to stronger piezoelectric fields. Second, the strength of the piezoelectric fields in InGaN quantum wells in green LEDs is found to depend strongly on the proximity of the quantum well to the p-n junction. Third, the variation of electrostatic potential across a heterostructure of aluminum gallium nitride (AlGaN) and gallium-nitride (GaN) with an aluminum nitride (AlN) interlayer has been profiled. It is found that the ionized donor-like surface states of the AlGaN play a dominant role in compensating the polarization charges and thus become the major source of the two dimensional electron gas. Fourth, the electronic band structure for a modulation-doped AlGaN/AIN/GaN superlattice with graded AlGaN barriers reveals that the nominally linear grading of the AlGaN barrier layers results in a parabolic profile in aluminum composition. Fifth, a comparison of the properties of a-plane GaN grown on various substrates reveals a high density of short stacking faults for direct growth on r-sapphire, a much lower density of longer faults for growth laterally over the amorphous mask, and no faults for growth on a-plane GaN bulk substrates. Finally, the role of buffer layer (BL) thickness on the formation of stacking faults in a-plane GaN grown on r-sapphire has been studied, showing the density of stacking faults is minimized in the optimized BL thickness of 30 nm. The results reported in this dissertation should contribute to the realization of more efficient solid-state lighting technologies.
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