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Silicon heterojunction solar cell an...
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University of Delaware., Department of Physics and Astronomy.
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Silicon heterojunction solar cell and crystallization of amorphous silicon.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Silicon heterojunction solar cell and crystallization of amorphous silicon./
作者:
Lu, Meijun.
面頁冊數:
295 p.
附註:
Adviser: Robert Birkmire.
Contained By:
Dissertation Abstracts International69-12B.
標題:
Physics, General. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3337401
ISBN:
9780549924623
Silicon heterojunction solar cell and crystallization of amorphous silicon.
Lu, Meijun.
Silicon heterojunction solar cell and crystallization of amorphous silicon.
- 295 p.
Adviser: Robert Birkmire.
Thesis (Ph.D.)--University of Delaware, 2008.
The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (∼100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/ crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (<200°C). In first part of this dissertation, I will introduce our work on front-junction SHJ solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells.
ISBN: 9780549924623Subjects--Topical Terms:
1018488
Physics, General.
Silicon heterojunction solar cell and crystallization of amorphous silicon.
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The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (∼100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/ crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (<200°C). In first part of this dissertation, I will introduce our work on front-junction SHJ solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells.
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Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (<600 nm) light, leading to non-ideal blue response and lower short circuit currents (JSC) in the front-junction SHJ cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers.
520
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Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c-Si, but also use the well established manufacturing techniques on thin-film. One of the main difficulties of poly-Si thin-film solar cells is growing large-grained poly-Si films (grain sizes comparable to the film thickness of micrometers) onto foreign substrates. Aluminum-induced crystallization (AIC) is one technique that has been developed to transform the amorphous Si to large-grain poly-Si. In this dissertation, our systematic studies of AIC samples with different stack structures, with and without interface oxide layer, annealed both below and above eutectic temperature will be introduced, and a phenomenological model will be proposed to explain the experimental results.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3337401
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