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A 900MHz Low Noise Amplifier with te...

University of Arkansas.

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A 900MHz Low Noise Amplifier with temperature compensated biasing.

Record Type:	Electronic resources : Monograph/item
Title/Author:	A 900MHz Low Noise Amplifier with temperature compensated biasing./
Author:	Sharma, Mohit.
Description:	172 p.
Notes:	Source: Masters Abstracts International, Volume: 46-06, page: 3384.
Contained By:	Masters Abstracts International46-06.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1456131
ISBN:	9780549667391

A 900MHz Low Noise Amplifier with temperature compensated biasing.
Sharma, Mohit.

A 900MHz Low Noise Amplifier with temperature compensated biasing. - 172 p.

Source: Masters Abstracts International, Volume: 46-06, page: 3384.

Thesis (M.S.E.E.)--University of Arkansas, 2008.

This thesis describes the design of the LNA including the changes made in the second design. Details of the design, layout, simulation and testing are provided.

ISBN: 9780549667391Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

A 900MHz Low Noise Amplifier with temperature compensated biasing.
LDR:01820nmm 2200265 a 45 001 862728
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008 100721s2008 ||||||||||||||||| ||eng d
020 $a 9780549667391
035 $a (UMI)AAI1456131
035 $a AAI1456131
040 $a UMI $c UMI
100 1 $a Sharma, Mohit. $3 1030570
245 1 2 $a A 900MHz Low Noise Amplifier with temperature compensated biasing.
300 $a 172 p.
500 $a Source: Masters Abstracts International, Volume: 46-06, page: 3384.
502 $a Thesis (M.S.E.E.)--University of Arkansas, 2008.
520 $a This thesis describes the design of the LNA including the changes made in the second design. Details of the design, layout, simulation and testing are provided.
520 $a An LNA is a crucial building block of a wireless communications receiver, directly determining the receiver's noise performance. This thesis describes the design, layout, simulation and testing of an integrated bipolar Low Noise Amplifier (LNA), designed for operation at 900MHz. This LNA is implemented in IBM's 0.5mu SiGe5AM BiCMOS process. The LNA utilizes a bias scheme that compensates for first order performance variation with temperature. The design is based on a published journal paper [10].
520 $a Two versions of the LNA have been designed and tested, with the second version improving upon the first design. The first LNA has low designed gain, and after fabrication it is found to amplify its input only below 450MHz. The second LNA has higher designed gain, and its measured gain is 14dB with a 1-dB compression point of -21.5dBm, and a total current consumption of 8.6mA.
590 $a School code: 0011.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a University of Arkansas. $3 1017562
773 0 $t Masters Abstracts International $g 46-06.
790 $a 0011
791 $a M.S.E.E.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1456131