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New Methods in Hall Effect Measureme...

Ryan, William L.

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New Methods in Hall Effect Measurement of Low Mobility Materials.

Record Type:	Electronic resources : Monograph/item
Title/Author:	New Methods in Hall Effect Measurement of Low Mobility Materials./
Author:	Ryan, William L.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2024,
Description:	162 p.
Notes:	Source: Dissertations Abstracts International, Volume: 86-01, Section: B.
Contained By:	Dissertations Abstracts International86-01B.
Subject:	Condensed matter physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31302422
ISBN:	9798383198124

New Methods in Hall Effect Measurement of Low Mobility Materials.
Ryan, William L.

New Methods in Hall Effect Measurement of Low Mobility Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2024 - 162 p.

Source: Dissertations Abstracts International, Volume: 86-01, Section: B.

Thesis (Ph.D.)--State University of New York at Binghamton, 2024.

The Hall effect is essential to basic and applied semiconductor research because it separates the electrical resistance of a sample into charge carrier density n and mobility µ. It is a perpendicular voltage that develops across a conductive sample when subjected to current and an external magnetic field, B. The voltage is proportional to the dimensionless number µB, and thus becomes more difficult to measure as the mobility of the sample decreases. The minimum measurable µB also provides a useful way to compare Hall effect measurement methods. The most common DC Hall effect technique is limited to µB ≥ 2 ∗ 10−4. The standard AC Hall method pushes the limit down to 3.7 ∗ 10−7. This increased sensitivity comes at the cost of long measurement times, up to 10 hours. By incorporating robust complex linear fitting, a zero drift neutralizing current sweep, and a new on-line stationarity test we have extended the AC Hall effect to µB ≈ 8 ∗ 10−8 . Additionally, we have reduced the measurement time to under one hour. Using this new method we have measured the mobility of InSb to be 1.96 ∗ 104 ± 0.05 ∗ 104 cm2/Vs , 4000A sputtered InGaZnO4 as 1.816 ± 0.06cm2/ Vs , 100A thin film Cu as 80 ± 40cm2/Vs at 300K; and reactively sputtered NiO as 2.0 ∗ 10−3 ± 0.5 ∗ 10−3 cm2/Vs at 305K.

ISBN: 9798383198124Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

Hall effect

New Methods in Hall Effect Measurement of Low Mobility Materials.
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100 1 $a Ryan, William L. $0 (orcid)0009-0008-3215-5484 $3 3773942
245 1 0 $a New Methods in Hall Effect Measurement of Low Mobility Materials.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 162 p.
500 $a Source: Dissertations Abstracts International, Volume: 86-01, Section: B.
500 $a Advisor: White, Bruce E.
502 $a Thesis (Ph.D.)--State University of New York at Binghamton, 2024.
520 $a The Hall effect is essential to basic and applied semiconductor research because it separates the electrical resistance of a sample into charge carrier density n and mobility µ. It is a perpendicular voltage that develops across a conductive sample when subjected to current and an external magnetic field, B. The voltage is proportional to the dimensionless number µB, and thus becomes more difficult to measure as the mobility of the sample decreases. The minimum measurable µB also provides a useful way to compare Hall effect measurement methods. The most common DC Hall effect technique is limited to µB ≥ 2 ∗ 10−4. The standard AC Hall method pushes the limit down to 3.7 ∗ 10−7. This increased sensitivity comes at the cost of long measurement times, up to 10 hours. By incorporating robust complex linear fitting, a zero drift neutralizing current sweep, and a new on-line stationarity test we have extended the AC Hall effect to µB ≈ 8 ∗ 10−8 . Additionally, we have reduced the measurement time to under one hour. Using this new method we have measured the mobility of InSb to be 1.96 ∗ 104 ± 0.05 ∗ 104 cm2/Vs , 4000A sputtered InGaZnO4 as 1.816 ± 0.06cm2/ Vs , 100A thin film Cu as 80 ± 40cm2/Vs at 300K; and reactively sputtered NiO as 2.0 ∗ 10−3 ± 0.5 ∗ 10−3 cm2/Vs at 305K.
590 $a School code: 0792.
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Statistics. $3 517247
650 4 $a Materials science. $3 543314
653 $a Hall effect
653 $a Linear model
653 $a Measurement
653 $a Mobility
653 $a Stationarity
690 $a 0611
690 $a 0463
690 $a 0794
710 2 $a State University of New York at Binghamton. $b Physics, Applied Physics, and Astronomy. $3 1266322
773 0 $t Dissertations Abstracts International $g 86-01B.
790 $a 0792
791 $a Ph.D.
792 $a 2024
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31302422