東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Fabrication of Tungsten Oxide Thin F...

Momanyi, Geoffrey.

FindBook

Google Book

Amazon

博客來

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method./
作者:	Momanyi, Geoffrey.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	83 p.
附註:	Source: Masters Abstracts International, Volume: 84-11.
Contained By:	Masters Abstracts International84-11.
標題:	Nanotechnology. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30540615
ISBN:	9798379521820

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
Momanyi, Geoffrey.

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 83 p.

Source: Masters Abstracts International, Volume: 84-11.

Thesis (M.S.)--Youngstown State University, 2023.

Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 {phono}{mllhring}C, 300 {phono}{mllhring}C, 400 {phono}{mllhring}C, and 500 {phono}{mllhring}C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 {phono}{aelig}m and annealed at 400 {phono}{mllhring}C, achieved a photocurrent density of 98.0 {phono}{aelig}A/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3{A0}layer.

ISBN: 9798379521820Subjects--Topical Terms:

526235
Nanotechnology.
Subjects--Index Terms:

Tungsten oxide

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
LDR:02795nmm a2200445 4500 001 2402144
005 20241028051436.5
006 m o d
007 cr#unu||||||||
008 251215s2023 ||||||||||||||||| ||eng d
020 $a 9798379521820
035 $a (MiAaPQ)AAI30540615
035 $a (MiAaPQ)OhioLINKysu1683732746275437
035 $a AAI30540615
035 $a 2402144
040 $a MiAaPQ $c MiAaPQ
100 1 $a Momanyi, Geoffrey. $3 3772363
245 1 0 $a Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2023
300 $a 83 p.
500 $a Source: Masters Abstracts International, Volume: 84-11.
500 $a Advisor: Linkous, Clovis A.
502 $a Thesis (M.S.)--Youngstown State University, 2023.
520 $a Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 {phono}{mllhring}C, 300 {phono}{mllhring}C, 400 {phono}{mllhring}C, and 500 {phono}{mllhring}C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 {phono}{aelig}m and annealed at 400 {phono}{mllhring}C, achieved a photocurrent density of 98.0 {phono}{aelig}A/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3{A0}layer.
590 $a School code: 1238.
650 4 $a Nanotechnology. $3 526235
650 4 $a Chemistry. $3 516420
650 4 $a Energy. $3 876794
650 4 $a Alternative energy. $3 3436775
650 4 $a Environmental science. $3 677245
650 4 $a Analytical chemistry. $3 3168300
653 $a Tungsten oxide
653 $a Sol-gel
653 $a Thin films
653 $a Stainless steel
653 $a Linear sweep voltammetry
690 $a 0652
690 $a 0485
690 $a 0486
690 $a 0791
690 $a 0363
690 $a 0768
710 2 $a Youngstown State University. $b Department of Biological Sciences and Chemistry. $3 3686934
773 0 $t Masters Abstracts International $g 84-11.
790 $a 1238
791 $a M.S.
792 $a 2023
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30540615