東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Processing Options for Engineered Fe...

Hsain, Hanan Alexandra.

Linked to FindBook

Google Book

Amazon

博客來

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces./
Author:	Hsain, Hanan Alexandra.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2022,
Description:	259 p.
Notes:	Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
Contained By:	Dissertations Abstracts International84-04B.
Subject:	Materials science. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29420049
ISBN:	9798352650516

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.
Hsain, Hanan Alexandra.

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 259 p.

Source: Dissertations Abstracts International, Volume: 84-04, Section: B.

Thesis (Ph.D.)--North Carolina State University, 2022.

Polymorphic HfxZr1-xO2 (HZO) thin films exhibit a wide range of functional properties, e.g., dielectric, ferroelectric, and anti-ferroelectric properties. Compatibility with complementary metal-oxide semiconductor (CMOS) technology, in combination with its demonstrated ferroelectricity at the nanometer scale (~ 10 nm), make HZO thin films an attractive candidate for electronic memory applications. An understanding of the processing-structure-properties of HZO and its interfaces is critical in realizing applications such as efficient non-volatile memory storage in devices such as ferroelectric random access memory (FeRAM) and ferroelectric fieldeffect transistors (FeFET). While the tetragonal phase (P42/nmc) is typically stabilized in HZO thin films < 30 nm, processing choices such as the use of a capping layer or quench cooling after annealing has been found to induce shearing of the tetragonal lattice and result in the polar orthorhombic phase (Pca21). Since ferroelectricity in HZO thin films has been ascribed to the stabilization of this noncentrosymetric orthorhombic phase (o-phase), many studies have sought to maximize the o-phase fraction in polycrystalline thin films to yield the highest possible remanent polarization.The use of TiN electrodes within the metal-ferroelectric-metal (MFM) structures accomplish three primary goals: (1) enables electrical contact with the oxide for characterization purposes, (2) mechanically confines the HZO during annealing process whereby the oxide undergoes tensile during rapid cooling, and (3) acts as an oxygen sink which creates a slightly oxygen deficient HZO layer. Given that both tensile strain and oxygen vacancies are thought to be key enablers for stabilizing the ferroelectric phase, a deeper understanding of the TiN/HZO interface would enrich our understanding on the origins of ferroelectricity in HZO as well as developing process strategies for HZO-based devices with robust electrical properties. Despite the high remanent polarization and integrability of HZO into CMOS-based devices, major challenges remain. The so called "wake-up" effect in which the remanent polarization varies as a function of cycling number along with premature dielectric breakdown of devices limit the applicability of HZO films into commercial devices which often requires >1010 read/write cycles for industry applications. Given that the wake-up effect and fatigue has been directly linked to defects such as oxygen vacancies and interstitials, the careful design of TiN/HZO interfaces is crucial in balancing a high remanent polarization with device longevity. In this dissertation, an in situ high temperature X-ray diffraction study is first carried out across HfO2-ZrO2 compositions to optimize the annealing temperature and stoichiometry of studied HZO films. Three processing strategies are then presented for engineering the TiN/HZO interface, namely (1) maintaining vacuum during sequential atomic layer deposition of the entire capacitor stack, (2) O2-plasma ALD processing of the HZO film, and (3) the insertion of 1-nm Al2O3 as top and bottom interlayers in TiN/HZO/TiN structures. The aim of this dissertation is thus to generate crucial processing-structure-property understanding of HZO/TiN interfaces for future integration into ferroelectric memory and related devices.

ISBN: 9798352650516Subjects--Topical Terms:

543314
Materials science.

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.
LDR:04575nmm a2200409 4500 001 2400800
005 20240930130036.5
006 m o d
007 cr#unu||||||||
008 251215s2022 ||||||||||||||||| ||eng d
020 $a 9798352650516
035 $a (MiAaPQ)AAI29420049
035 $a (MiAaPQ)NCState_Univ18402039819
035 $a AAI29420049
040 $a MiAaPQ $c MiAaPQ
100 1 $a Hsain, Hanan Alexandra. $3 3770859
245 1 0 $a Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 259 p.
500 $a Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
500 $a Advisor: Barletta, Philip;So, Franky;Parsons, Gregory;Jones, Jacob L. .
502 $a Thesis (Ph.D.)--North Carolina State University, 2022.
520 $a Polymorphic HfxZr1-xO2 (HZO) thin films exhibit a wide range of functional properties, e.g., dielectric, ferroelectric, and anti-ferroelectric properties. Compatibility with complementary metal-oxide semiconductor (CMOS) technology, in combination with its demonstrated ferroelectricity at the nanometer scale (~ 10 nm), make HZO thin films an attractive candidate for electronic memory applications. An understanding of the processing-structure-properties of HZO and its interfaces is critical in realizing applications such as efficient non-volatile memory storage in devices such as ferroelectric random access memory (FeRAM) and ferroelectric fieldeffect transistors (FeFET). While the tetragonal phase (P42/nmc) is typically stabilized in HZO thin films < 30 nm, processing choices such as the use of a capping layer or quench cooling after annealing has been found to induce shearing of the tetragonal lattice and result in the polar orthorhombic phase (Pca21). Since ferroelectricity in HZO thin films has been ascribed to the stabilization of this noncentrosymetric orthorhombic phase (o-phase), many studies have sought to maximize the o-phase fraction in polycrystalline thin films to yield the highest possible remanent polarization.The use of TiN electrodes within the metal-ferroelectric-metal (MFM) structures accomplish three primary goals: (1) enables electrical contact with the oxide for characterization purposes, (2) mechanically confines the HZO during annealing process whereby the oxide undergoes tensile during rapid cooling, and (3) acts as an oxygen sink which creates a slightly oxygen deficient HZO layer. Given that both tensile strain and oxygen vacancies are thought to be key enablers for stabilizing the ferroelectric phase, a deeper understanding of the TiN/HZO interface would enrich our understanding on the origins of ferroelectricity in HZO as well as developing process strategies for HZO-based devices with robust electrical properties. Despite the high remanent polarization and integrability of HZO into CMOS-based devices, major challenges remain. The so called "wake-up" effect in which the remanent polarization varies as a function of cycling number along with premature dielectric breakdown of devices limit the applicability of HZO films into commercial devices which often requires >1010 read/write cycles for industry applications. Given that the wake-up effect and fatigue has been directly linked to defects such as oxygen vacancies and interstitials, the careful design of TiN/HZO interfaces is crucial in balancing a high remanent polarization with device longevity. In this dissertation, an in situ high temperature X-ray diffraction study is first carried out across HfO2-ZrO2 compositions to optimize the annealing temperature and stoichiometry of studied HZO films. Three processing strategies are then presented for engineering the TiN/HZO interface, namely (1) maintaining vacuum during sequential atomic layer deposition of the entire capacitor stack, (2) O2-plasma ALD processing of the HZO film, and (3) the insertion of 1-nm Al2O3 as top and bottom interlayers in TiN/HZO/TiN structures. The aim of this dissertation is thus to generate crucial processing-structure-property understanding of HZO/TiN interfaces for future integration into ferroelectric memory and related devices.
590 $a School code: 0155.
650 4 $a Materials science. $3 543314
650 4 $a Mathematics. $3 515831
650 4 $a Optics. $3 517925
650 4 $a Physics. $3 516296
650 4 $a Crystal structure. $3 3561040
650 4 $a Plasma. $3 877619
650 4 $a Cooling. $3 1457878
650 4 $a Electrodes. $3 629151
650 4 $a Spectrum analysis. $3 520440
650 4 $a Carbon. $3 604057
650 4 $a Electric fields. $3 880423
650 4 $a Metal fatigue. $3 3681450
650 4 $a Microscopy. $3 540544
650 4 $a Heat. $3 573595
650 4 $a Grain size. $3 3682362
650 4 $a Nanotechnology. $3 526235
650 4 $a Thin films. $3 626403
650 4 $a Geometry. $3 517251
650 4 $a Ferroelectrics. $3 3681651
650 4 $a Interfaces. $2 gtt $3 834756
650 4 $a Scholarships & fellowships. $3 3560311
650 4 $a Annealing. $2 lcstt $3 3267268
650 4 $a Analytical chemistry. $3 3168300
650 4 $a Chemistry. $3 516420
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Electromagnetics. $3 3173223
690 $a 0652
690 $a 0486
690 $a 0485
690 $a 0611
690 $a 0607
690 $a 0794
690 $a 0405
690 $a 0752
690 $a 0605
710 2 $a North Carolina State University. $3 1018772
773 0 $t Dissertations Abstracts International $g 84-04B.
790 $a 0155
791 $a Ph.D.
792 $a 2022
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29420049