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Modeling Electronic Conduction in Qu...
~
Eshraghi, Kassra.
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Modeling Electronic Conduction in Quantum Dot Materials.
Record Type:
Electronic resources : Monograph/item
Title/Author:
Modeling Electronic Conduction in Quantum Dot Materials./
Author:
Eshraghi, Kassra.
Published:
Ann Arbor : ProQuest Dissertations & Theses, : 2023,
Description:
39 p.
Notes:
Source: Masters Abstracts International, Volume: 85-07.
Contained By:
Masters Abstracts International85-07.
Subject:
Materials science. -
Online resource:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30690877
ISBN:
9798381302301
Modeling Electronic Conduction in Quantum Dot Materials.
Eshraghi, Kassra.
Modeling Electronic Conduction in Quantum Dot Materials.
- Ann Arbor : ProQuest Dissertations & Theses, 2023 - 39 p.
Source: Masters Abstracts International, Volume: 85-07.
Thesis (M.S.)--University of California, San Diego, 2023.
This item must not be sold to any third party vendors.
Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.
ISBN: 9798381302301Subjects--Topical Terms:
543314
Materials science.
Subjects--Index Terms:
Modeling
Modeling Electronic Conduction in Quantum Dot Materials.
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Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.
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https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30690877
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