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Beyond Si-based CMOS devices = materials to architecture /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Beyond Si-based CMOS devices/ edited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan.
其他題名:	materials to architecture /
其他作者:	Singh, Sangeeta.
出版者:	Singapore :Springer Nature Singapore : : 2024.,
面頁冊數:	xiv, 326 p. :ill. (chiefly col.), digital ;24 cm.
內容註:	Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.
Contained By:	Springer Nature eBook
標題:	Metal oxide semiconductors, Complementary. -
電子資源:	https://doi.org/10.1007/978-981-97-4623-1
ISBN:	9789819746231

Beyond Si-based CMOS devices = materials to architecture /
Beyond Si-based CMOS devicesmaterials to architecture /[electronic resource] :edited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan. - Singapore :Springer Nature Singapore :2024. - xiv, 326 p. :ill. (chiefly col.), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.

This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.

ISBN: 9789819746231

Standard No.: 10.1007/978-981-97-4623-1doiSubjects--Topical Terms:

649504
Metal oxide semiconductors, Complementary.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 537.6223

Beyond Si-based CMOS devices = materials to architecture /
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