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III-VI semiconductors and oxides : = Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	III-VI semiconductors and oxides :/
其他題名:	Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide.
作者:	Lovejoy, Tracy Clark.
面頁冊數:	1 online resource (173 pages)
附註:	Source: Dissertations Abstracts International, Volume: 72-08, Section: B.
Contained By:	Dissertations Abstracts International72-08B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3431612click for full text (PQDT)
ISBN:	9781124313382

III-VI semiconductors and oxides : = Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide.
Lovejoy, Tracy Clark.

III-VI semiconductors and oxides :Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide. - 1 online resource (173 pages)

Source: Dissertations Abstracts International, Volume: 72-08, Section: B.

Thesis (Ph.D.)--University of Washington, 2010.

Includes bibliographical references

The effects of vacancies on the properties of certain III2VI 3 semiconductor compounds are studied with the goal of learning new, interesting physics while laying the groundwork for using these materials in next generation electronic devices. These III-VI materials exhibit intrinsic nanoscale voids or vacancies that order in different ways and impact the electronic structure, dopant incorporation and defect formation. Ga2Se3 and γ-In2Se3 are tetrahedrally bonded III-VI semiconductors with 1/3 of the cation sites vacant. Lattice matching allows excellent quality growth of Ga2Se 3 on silicon by molecular beam epitaxy. Comparison of our experimental map of the electronic band structure with theory shows proper theoretical treatment of the vacancies is essential to generate the band structure. We use scanning tunneling microscopy and X-ray absorption to study the Mn-doping of Ga2Se3, an intriguing candidate dilute magnetic semiconductor (DMS) system. Thin uniformly doped films of Mn-doped Ga2Se 3 were grown at low concentrations, but thicker or more concentrated films exhibit islands of MnSe. This may limit the applicability of Mn-doped Ga2Se3 as a DMS. γ-In2Se3 has a large lattice mismatch (∼7%) with silicon, which suggests that thick laminar films of In2Se 3 on silicon should not be possible. However, we find that laminar films can be grown up to at least 6 bilayer thickness, and show that this is due to an unusual Se-first interface with the silicon substrate. β-Ga2O3 is an optically transparent, III-VI semiconductor that generally exhibits n-type conductivity. We study the electronic structure, magnetic structure, surface termination, and surface morphology of pure, Mn- and Cr-doped β-Ga2O3 single crystals. Cr3+ and mixed valence Mn2+/3+ occupy the octahedral sites in the structure. Mn incorporation degrades the crystal quality, while Cr does not. We use density functional theory to compute the activation energy of au oxygen vacancy defect, and find, contrary to the commonly held model, that it is too large for oxygen vacancies to contribute substantially to the conductivity in the n-type material. Using hard x-ray photoemission, we show that the bands are bent upward at the surface of air-cleaved β-Ga 2O3 crystals, lowering the local activation energy.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781124313382Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

Electronic structureIndex Terms--Genre/Form:

542853
Electronic books.

III-VI semiconductors and oxides : = Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide.
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245 1 0 $a III-VI semiconductors and oxides : $b Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide.
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500 $a Source: Dissertations Abstracts International, Volume: 72-08, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Olmstead, Marjorie A.
502 $a Thesis (Ph.D.)--University of Washington, 2010.
504 $a Includes bibliographical references
520 $a The effects of vacancies on the properties of certain III2VI 3 semiconductor compounds are studied with the goal of learning new, interesting physics while laying the groundwork for using these materials in next generation electronic devices. These III-VI materials exhibit intrinsic nanoscale voids or vacancies that order in different ways and impact the electronic structure, dopant incorporation and defect formation. Ga2Se3 and γ-In2Se3 are tetrahedrally bonded III-VI semiconductors with 1/3 of the cation sites vacant. Lattice matching allows excellent quality growth of Ga2Se 3 on silicon by molecular beam epitaxy. Comparison of our experimental map of the electronic band structure with theory shows proper theoretical treatment of the vacancies is essential to generate the band structure. We use scanning tunneling microscopy and X-ray absorption to study the Mn-doping of Ga2Se3, an intriguing candidate dilute magnetic semiconductor (DMS) system. Thin uniformly doped films of Mn-doped Ga2Se 3 were grown at low concentrations, but thicker or more concentrated films exhibit islands of MnSe. This may limit the applicability of Mn-doped Ga2Se3 as a DMS. γ-In2Se3 has a large lattice mismatch (∼7%) with silicon, which suggests that thick laminar films of In2Se 3 on silicon should not be possible. However, we find that laminar films can be grown up to at least 6 bilayer thickness, and show that this is due to an unusual Se-first interface with the silicon substrate. β-Ga2O3 is an optically transparent, III-VI semiconductor that generally exhibits n-type conductivity. We study the electronic structure, magnetic structure, surface termination, and surface morphology of pure, Mn- and Cr-doped β-Ga2O3 single crystals. Cr3+ and mixed valence Mn2+/3+ occupy the octahedral sites in the structure. Mn incorporation degrades the crystal quality, while Cr does not. We use density functional theory to compute the activation energy of au oxygen vacancy defect, and find, contrary to the commonly held model, that it is too large for oxygen vacancies to contribute substantially to the conductivity in the n-type material. Using hard x-ray photoemission, we show that the bands are bent upward at the surface of air-cleaved β-Ga 2O3 crystals, lowering the local activation energy.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Condensed matter physics. $3 3173567
653 $a Electronic structure
653 $a Gallium oxide
653 $a Indium selenide
653 $a Transition metal doping
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710 2 $a University of Washington. $3 545923
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856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3431612 $z click for full text (PQDT)