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Investigation of laser annealing of thin film phosphors for potential luminescent devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Investigation of laser annealing of thin film phosphors for potential luminescent devices./
作者:	Koutsogeorgis, Demosthenes C.
面頁冊數:	1 online resource (243 pages)
附註:	Source: Dissertations Abstracts International, Volume: 78-12, Section: C.
Contained By:	Dissertations Abstracts International78-12C.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10290710click for full text (PQDT)
ISBN:	9781369329599

Investigation of laser annealing of thin film phosphors for potential luminescent devices.
Koutsogeorgis, Demosthenes C.

Investigation of laser annealing of thin film phosphors for potential luminescent devices. - 1 online resource (243 pages)

Source: Dissertations Abstracts International, Volume: 78-12, Section: C.

Thesis (Ph.D.)--Nottingham Trent University (United Kingdom), 2003.

Includes bibliographical references

The primary scope of this work has been to investigate the benefits of excimer laser annealing of inorganic thin film phosphors for use in luminescent devices. Extensive experiments were performed on UV pulsed laser annealing of thin film phosphors in various pressurized ambient environments, in an effort to study the variables involved and the resulting enhancement of photo, electro and cathodo- luminescent properties. The majority of the work was concerned with ZnSiMn thin film phosphors for use in electroluminescent devices. Lasers utilized for the investigation include KrF and ArF excimer lasers, and ASTRA and VULCAN high energy lasers at the Central Laser Facility at the Rutherford Appleton Laboratory. Optimized laser annealing was found to be highly dependent upon the phosphors and the substrate used, with the combination of thermal and laser annealing also significant in the final performance of the films and devices. In all laser systems investigated, the use of super-bandgap irradiation could be optimized to substantially enhance the luminescent properties of the phosphors studied. With laser annealing, ZnS:Mn ac thin film electroluminescent devices were produced showing a fourfold increase in luminance and improved electrical stability compared to equivalent thermal annealed devices. The detailed study of laser annealing of thin film phosphors has lead to promising results concerning the potential of the technique and also to the interest of the relevant emissive displays industry. The beneficial effects of the technique were applied as a feasibility study to commercial samples for the first time, proving the viability and compatibility of the annealing process with current commercial production. Also, as a result of this work, a high volume production laser annealing system has been designed and proposed to be implemented in the commercial fabrication of thin film electroluminescent flat panel displays.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781369329599Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Pulsed laser annealingIndex Terms--Genre/Form:

542853
Electronic books.

Investigation of laser annealing of thin film phosphors for potential luminescent devices.
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520 $a The primary scope of this work has been to investigate the benefits of excimer laser annealing of inorganic thin film phosphors for use in luminescent devices. Extensive experiments were performed on UV pulsed laser annealing of thin film phosphors in various pressurized ambient environments, in an effort to study the variables involved and the resulting enhancement of photo, electro and cathodo- luminescent properties. The majority of the work was concerned with ZnSiMn thin film phosphors for use in electroluminescent devices. Lasers utilized for the investigation include KrF and ArF excimer lasers, and ASTRA and VULCAN high energy lasers at the Central Laser Facility at the Rutherford Appleton Laboratory. Optimized laser annealing was found to be highly dependent upon the phosphors and the substrate used, with the combination of thermal and laser annealing also significant in the final performance of the films and devices. In all laser systems investigated, the use of super-bandgap irradiation could be optimized to substantially enhance the luminescent properties of the phosphors studied. With laser annealing, ZnS:Mn ac thin film electroluminescent devices were produced showing a fourfold increase in luminance and improved electrical stability compared to equivalent thermal annealed devices. The detailed study of laser annealing of thin film phosphors has lead to promising results concerning the potential of the technique and also to the interest of the relevant emissive displays industry. The beneficial effects of the technique were applied as a feasibility study to commercial samples for the first time, proving the viability and compatibility of the annealing process with current commercial production. Also, as a result of this work, a high volume production laser annealing system has been designed and proposed to be implemented in the commercial fabrication of thin film electroluminescent flat panel displays.
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