語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
FindBook
Google Book
Amazon
博客來
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films./
作者:
Track, Elie Khalil.
面頁冊數:
1 online resource (227 pages)
附註:
Source: Dissertations Abstracts International, Volume: 51-09, Section: B.
Contained By:
Dissertations Abstracts International51-09B.
標題:
Condensation. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9009430click for full text (PQDT)
ISBN:
9798206163803
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
Track, Elie Khalil.
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
- 1 online resource (227 pages)
Source: Dissertations Abstracts International, Volume: 51-09, Section: B.
Thesis (Ph.D.)--Yale University, 1988.
Includes bibliographical references
Tunneling measurements have been performed on tantalum surface layers on niobium. The thickness of the tantalum layer ranges from 10 to 100 A. The critical current, bound-state energy, phonon structure, and oxide barrier shape are investigated. The results are compared with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the IcR product due to strong electron-phonon coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r² = 0.01. In addition, a new fabrication technique--dual ion-beam sputtering--is used to deposit thin films of NbN. The properties of these films and of tunnel junctions formed with NbN as base electrode and native-oxide as well as artificial barriers are reported. A universal empirical correlation is found between the average barrier height ɸ and the effective barrier width d for measured junctions. This correlation, which holds both for our data and for available data in the literature for oxide-barrier junctions, is discussed in the general context of oxide growth and compared with results for artificial tunnel barriers. Finally, high quality Ta/PbBi tunnel junction of area ≤1 μm² and current density 10³-10⁵ A/cm² are produced using a window geometry. The electrical noise properties of these junctions are investigated. Discrete voltage switching events allow the identification of the effect of single localized states in the oxide barrier. The voltage and temperature dependence of the switching rates are consistent with a microscopic model based on the emission and capture of individual electrons at the localized sites within the barrier.
Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023
Mode of access: World Wide Web
ISBN: 9798206163803Subjects--Topical Terms:
942542
Condensation.
Subjects--Index Terms:
Niobium nitrideIndex Terms--Genre/Form:
542853
Electronic books.
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
LDR
:03017nmm a2200337K 4500
001
2360348
005
20230926101846.5
006
m o d
007
cr mn ---uuuuu
008
241011s1988 xx obm 000 0 eng d
020
$a
9798206163803
035
$a
(MiAaPQ)AAI9009430
035
$a
AAI9009430
040
$a
MiAaPQ
$b
eng
$c
MiAaPQ
$d
NTU
100
1
$a
Track, Elie Khalil.
$3
3700965
245
1 0
$a
Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
264
0
$c
1988
300
$a
1 online resource (227 pages)
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
500
$a
Source: Dissertations Abstracts International, Volume: 51-09, Section: B.
500
$a
Publisher info.: Dissertation/Thesis.
502
$a
Thesis (Ph.D.)--Yale University, 1988.
504
$a
Includes bibliographical references
520
$a
Tunneling measurements have been performed on tantalum surface layers on niobium. The thickness of the tantalum layer ranges from 10 to 100 A. The critical current, bound-state energy, phonon structure, and oxide barrier shape are investigated. The results are compared with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the IcR product due to strong electron-phonon coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r² = 0.01. In addition, a new fabrication technique--dual ion-beam sputtering--is used to deposit thin films of NbN. The properties of these films and of tunnel junctions formed with NbN as base electrode and native-oxide as well as artificial barriers are reported. A universal empirical correlation is found between the average barrier height ɸ and the effective barrier width d for measured junctions. This correlation, which holds both for our data and for available data in the literature for oxide-barrier junctions, is discussed in the general context of oxide growth and compared with results for artificial tunnel barriers. Finally, high quality Ta/PbBi tunnel junction of area ≤1 μm² and current density 10³-10⁵ A/cm² are produced using a window geometry. The electrical noise properties of these junctions are investigated. Discrete voltage switching events allow the identification of the effect of single localized states in the oxide barrier. The voltage and temperature dependence of the switching rates are consistent with a microscopic model based on the emission and capture of individual electrons at the localized sites within the barrier.
533
$a
Electronic reproduction.
$b
Ann Arbor, Mich. :
$c
ProQuest,
$d
2023
538
$a
Mode of access: World Wide Web
650
4
$a
Condensation.
$3
942542
650
4
$a
Condensed matter physics.
$3
3173567
653
$a
Niobium nitride
653
$a
Tantalum
655
7
$a
Electronic books.
$2
lcsh
$3
542853
690
$a
0611
710
2
$a
ProQuest Information and Learning Co.
$3
783688
710
2
$a
Yale University.
$3
515640
773
0
$t
Dissertations Abstracts International
$g
51-09B.
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9009430
$z
click for full text (PQDT)
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9482704
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入