東華大學圖書館 |

A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation = = Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation =/
其他題名:	Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
其他題名:	Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
作者:	Uzunoglu, Baha Erim.
面頁冊數:	1 online resource (119 pages)
附註:	Source: Masters Abstracts International, Volume: 84-05.
Contained By:	Masters Abstracts International84-05.
標題:	Silicon. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29469890click for full text (PQDT)
ISBN:	9798352969731

A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation = = Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
Uzunoglu, Baha Erim.

A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation =Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri. - 1 online resource (119 pages)

Source: Masters Abstracts International, Volume: 84-05.

Thesis (M.Sc.)--Bilkent Universitesi (Turkey), 2022.

Includes bibliographical references

MEMS gyroscopes are commonly used for rotation measurement in navigation. Even though the noise performance of these sensors has improved in the last few decades, the long-term drift problem is still prominent for these sensors. Longterm drift error is caused by external factors such as temperature and induced stress on the MEMS chip. With this work, we present an on-chip solution for the compensation of long-term drift. Due to its compact and singular anchor morphology, a vibrating ring gyroscope design was employed. Eight bridge-type capacitive stress sensors were placed periodically at the inner section of the ring surrounding the inner anchor, which adds localized stress measurement capability to the design. Another eight stress sensors were placed at the outer section of the ring surrounding the electrodes of the device. Tensile stress was applied on a testbed, and the output of the stress sensors and the gyroscope were recorded. Then, the gyroscope was subjected to a zero rate output(ZRO) test in mismatch and matched frequency configurations. The compensated output of the device was able to reach 0.008◦/h in mismatched mode and 0.003◦/h in matched mode without any signs of drift. The stress and the gyroscope output were partitioned into 12 hour blocks to increase the performance of the least squares fitting algorithm. We have observed a decrease in the compensation performance due to possible nonlinear and hysteresis effects generated during the long-term operation. Finally, we were able to show that the change in temperature wasn't sufficient enough to explain the frequency change of the drive and sense modes.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798352969731Subjects--Topical Terms:

669429
Silicon.
Index Terms--Genre/Form:

542853
Electronic books.

A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation = = Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
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100 1 $a Uzunoglu, Baha Erim. $3 3698448
245 1 2 $a A MEMS Vibrating Ring Gyroscope with on-Chip Capacitive Stress Sensors for Drift Compensation = $b Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
246 3 1 $a Uzun Donem Sapma Dorulamasi Icin CIp Ici Kapasitif Stress Sensorlu MEMS Titrek Halka Donuolceri.
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300 $a 1 online resource (119 pages)
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500 $a Source: Masters Abstracts International, Volume: 84-05.
500 $a Advisor: Tatar, Erdinc.
502 $a Thesis (M.Sc.)--Bilkent Universitesi (Turkey), 2022.
504 $a Includes bibliographical references
520 $a MEMS gyroscopes are commonly used for rotation measurement in navigation. Even though the noise performance of these sensors has improved in the last few decades, the long-term drift problem is still prominent for these sensors. Longterm drift error is caused by external factors such as temperature and induced stress on the MEMS chip. With this work, we present an on-chip solution for the compensation of long-term drift. Due to its compact and singular anchor morphology, a vibrating ring gyroscope design was employed. Eight bridge-type capacitive stress sensors were placed periodically at the inner section of the ring surrounding the inner anchor, which adds localized stress measurement capability to the design. Another eight stress sensors were placed at the outer section of the ring surrounding the electrodes of the device. Tensile stress was applied on a testbed, and the output of the stress sensors and the gyroscope were recorded. Then, the gyroscope was subjected to a zero rate output(ZRO) test in mismatch and matched frequency configurations. The compensated output of the device was able to reach 0.008◦/h in mismatched mode and 0.003◦/h in matched mode without any signs of drift. The stress and the gyroscope output were partitioned into 12 hour blocks to increase the performance of the least squares fitting algorithm. We have observed a decrease in the compensation performance due to possible nonlinear and hysteresis effects generated during the long-term operation. Finally, we were able to show that the change in temperature wasn't sufficient enough to explain the frequency change of the drive and sense modes.
520 $a MEMS donuolcer kullanimi navigasyona olan talebin artmasiyla yukselmistir. Son donemde yapilan arastirmalarla bu sensorlerin gurultu performansi gelistirilmis olsa da sensorler uzun sure calistirildiklarinda cikti degerlerinin O'dan saptigi gozlenir. Uzun donem sapmasi olarak da nitelendirilen bu olay MEMS cipine etki eden sicaklik ve mekanik stres gibi dis etmenlerden kaynaklan- maktadir. Bu calismada, uzun donem sapmasini yok etmek icin cip icerisine yerlestirilmis bir cozum sunmaktayiz. Halkasal tasarim tipi sikistiralabilir oldugundan donuolcerin mekaniksel tasarimnda tercih edilmistir. Stres sensorleri kopru tipi yapiya sahip olup kapasitif olcumleme yapmaktadir. Halka sekizi icte ve sekizi dista olan stres sensorleriyle cevrelenmistir. Bu sayede bolgesel stres olcumunun daha hassas yapilabilmesi hedeflenmistir. Stres duzeniginin uzerine yerlestirilmis cip karti gerdirilmis ve sensor ciktisi kaydedilmistir. Sonrasinda, donuolcer eslenmis ve eslenmemis frekans kosullarinda sifir donu cikti(SDO) tes- tine tabi tutulmustur. Stres dogrulamasi yapildiktan sonra eslenmemis donuolcer 0.008°/saat ve eslenmis donuolcer 0.003°/saat degerlerine ulasmistir. Ayni za- manda donuolcer sapma belirtisi de gostermemektedir. Dogrulama en kucuk kareler metodu ve kaydedilmis olan verilerin 12 saatlik sekmelere bolunmesiyle yapilmistir. Bunun sebebi ise donuolcer ve stres sensorleri arasindaki iliskinin zamanla dogrusalligini kaybetmesidir. Son olarak bu arastirma sicakligin donuolcerdeki frekans degisimlerini bire bir olarak eslemekte yetersiz kaldigini gostermistir.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Silicon. $3 669429
650 4 $a Receivers & amplifiers. $3 3559205
650 4 $a Electrodes. $3 629151
650 4 $a Electric fields. $3 880423
650 4 $a Neural networks. $3 677449
650 4 $a Sensors. $3 3549539
650 4 $a Aluminum. $3 735071
650 4 $a Design. $3 518875
650 4 $a Algorithms. $3 536374
650 4 $a Long term. $3 3697209
650 4 $a Stress measurement. $3 3687994
650 4 $a Computer science. $3 523869
650 4 $a Electrical engineering. $3 649834
650 4 $a Electromagnetics. $3 3173223
650 4 $a Physics. $3 516296
655 7 $a Electronic books. $2 lcsh $3 542853
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690 $a 0800
690 $a 0984
690 $a 0544
690 $a 0607
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710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a Bilkent Universitesi (Turkey). $3 1919057
773 0 $t Masters Abstracts International $g 84-05.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29469890 $z click for full text (PQDT)