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Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications./
Author:	Sapkota, Yub Raj.
Description:	1 online resource (165 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 83-12, Section: B.
Contained By:	Dissertations Abstracts International83-12B.
Subject:	Applied physics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29063123click for full text (PQDT)
ISBN:	9798819389294

Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications.
Sapkota, Yub Raj.

Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications. - 1 online resource (165 pages)

Source: Dissertations Abstracts International, Volume: 83-12, Section: B.

Thesis (Ph.D.)--Southern Illinois University at Carbondale, 2022.

Includes bibliographical references

Spintronic-based magnetic random-access memory (MRAM) implementing the tunnel magnetoresistance (TMR) effect has various advantages over conventional semiconductor base memory devices, such as non-volatility and potentially high density and scalability. Traditional MRAM design implemented in-plane magnetic switching for the read/write operation which is now recognized to suffer from poor scalability below 60 nm. With the discovery of the spin-transfer torque (STT) effect, where the spin-polarized current is used to switch the ferromagnet, the MRAM design simplified considerably as it eliminated one of the two current-carrying wires that are used to generate the magnetic field required for switching. The thermal stability is further enhanced by using magnetic materials with perpendicular magnetic anisotropy (PMA). In current devices, perpendicular anisotropy is developed at the free magnetic layer (CoFeB) interface with the tunnel barrier (MgO). It is called interfacial-perpendicular anisotropy. However, it has been shown that this design has scaling issues below 20 nm. Materials with volume (bulk) perpendicular magnetic anisotropy should show better scaling without compromising on thermal stability.This dissertation work is focused on growth and physical property investigations of thin films of novel magnetic and electronic materials which are promising for MRAM devices. Leveraging on prior identified materials (both theory and bulk materials experiment) with tetragonal and hexagonal symmetry that support PMA, we have successfully implemented several manganese-based hexagonal Heusler-like Mn3-xFexSn (X=0,1,2) alloys predicted to be high PMA materials. While Mn3Sn thin films are reported in the literature, we are not aware of any thin film reports elsewhere on Fe2MnSn and Mn2FeSn thin films discussed here. All these materials are stabilized in the hexagonal structure which inherently supports perpendicular anisotropy. Specifically, we found that Mn3Sn has low saturation magnetization and high Tc but low magnetic anisotropy. Mn2FeSn has a moderate magnetic moment but low Tc (272 K). Fe2MnSn is the most favorable material among our investigations, with high magnetic anisotropy and high Curie temperature of 548 K, but with a higher than desired magnetization value. The magnetic anisotropy value of Fe2MnSn is estimated to be 0.56 MJ/m3. Such value is in the desirable range for MRAM devices. Our thermal stability calculations indicate that STT-MRAM with Fe2MnSn free layer can scale below 20 nm lateral size for 3nm free layer thickness. While the scaling behavior remains to be investigated experimentally, my work has demonstrated that research into new materials is always an exciting prospect particularly if combined with a theory-driven design approach.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798819389294Subjects--Topical Terms:

3343996
Applied physics.
Subjects--Index Terms:

ElectronicsIndex Terms--Genre/Form:

542853
Electronic books.

Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications.
LDR:04184nmm a2200397K 4500 001 2356717
005 20230619080056.5
006 m o d
007 cr mn ---uuuuu
008 241011s2022 xx obm 000 0 eng d
020 $a 9798819389294
035 $a (MiAaPQ)AAI29063123
035 $a AAI29063123
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Sapkota, Yub Raj. $3 3697216
245 1 0 $a Development of Novel Electronic and Magnetic Thin Films for Next Generation Spintronics Applications.
264 0 $c 2022
300 $a 1 online resource (165 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 83-12, Section: B.
500 $a Advisor: Mazumdar, Dipanjan.
502 $a Thesis (Ph.D.)--Southern Illinois University at Carbondale, 2022.
504 $a Includes bibliographical references
520 $a Spintronic-based magnetic random-access memory (MRAM) implementing the tunnel magnetoresistance (TMR) effect has various advantages over conventional semiconductor base memory devices, such as non-volatility and potentially high density and scalability. Traditional MRAM design implemented in-plane magnetic switching for the read/write operation which is now recognized to suffer from poor scalability below 60 nm. With the discovery of the spin-transfer torque (STT) effect, where the spin-polarized current is used to switch the ferromagnet, the MRAM design simplified considerably as it eliminated one of the two current-carrying wires that are used to generate the magnetic field required for switching. The thermal stability is further enhanced by using magnetic materials with perpendicular magnetic anisotropy (PMA). In current devices, perpendicular anisotropy is developed at the free magnetic layer (CoFeB) interface with the tunnel barrier (MgO). It is called interfacial-perpendicular anisotropy. However, it has been shown that this design has scaling issues below 20 nm. Materials with volume (bulk) perpendicular magnetic anisotropy should show better scaling without compromising on thermal stability.This dissertation work is focused on growth and physical property investigations of thin films of novel magnetic and electronic materials which are promising for MRAM devices. Leveraging on prior identified materials (both theory and bulk materials experiment) with tetragonal and hexagonal symmetry that support PMA, we have successfully implemented several manganese-based hexagonal Heusler-like Mn3-xFexSn (X=0,1,2) alloys predicted to be high PMA materials. While Mn3Sn thin films are reported in the literature, we are not aware of any thin film reports elsewhere on Fe2MnSn and Mn2FeSn thin films discussed here. All these materials are stabilized in the hexagonal structure which inherently supports perpendicular anisotropy. Specifically, we found that Mn3Sn has low saturation magnetization and high Tc but low magnetic anisotropy. Mn2FeSn has a moderate magnetic moment but low Tc (272 K). Fe2MnSn is the most favorable material among our investigations, with high magnetic anisotropy and high Curie temperature of 548 K, but with a higher than desired magnetization value. The magnetic anisotropy value of Fe2MnSn is estimated to be 0.56 MJ/m3. Such value is in the desirable range for MRAM devices. Our thermal stability calculations indicate that STT-MRAM with Fe2MnSn free layer can scale below 20 nm lateral size for 3nm free layer thickness. While the scaling behavior remains to be investigated experimentally, my work has demonstrated that research into new materials is always an exciting prospect particularly if combined with a theory-driven design approach.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Applied physics. $3 3343996
650 4 $a Electromagnetics. $3 3173223
650 4 $a Materials science. $3 543314
650 4 $a Electrical engineering. $3 649834
653 $a Electronics
653 $a Magnetic
653 $a Spintronics
653 $a Thin films
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0215
690 $a 0544
690 $a 0794
690 $a 0607
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a Southern Illinois University at Carbondale. $b Physics. $3 1676616
773 0 $t Dissertations Abstracts International $g 83-12B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29063123 $z click for full text (PQDT)