東華大學圖書館 |

Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments./
作者:	Franks, Matthew Lewis.
面頁冊數:	1 online resource (237 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-08, Section: A.
Contained By:	Dissertations Abstracts International84-08A.
標題:	High energy physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30227471click for full text (PQDT)
ISBN:	9798371936776

Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments.
Franks, Matthew Lewis.

Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments. - 1 online resource (237 pages)

Source: Dissertations Abstracts International, Volume: 84-08, Section: A.

Thesis (Ph.D.)--The University of Liverpool (United Kingdom), 2022.

Includes bibliographical references

As particle searches and physics requirements in high energy particle physics experiments become more sophisticated, particle tracking detectors that are more precise, accurate, and resilient must be developed while remaining cost-effective. One promising candidate for producing future silicon particle tracking detectors is High- Voltage Complementary Metal-Oxide-Semiconductor (HV-CMOS) technology. This technology is emerging within the particle physics community and has been selected for the Mu3e experiment and proposed for use in the upgraded LHCb experiment at the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Commercialised technologies such as HV-CMOS benefit from a relatively fast, low-cost manufacturing process when compared to bespoke techniques used in the production of the current state-of-the-art hybrid pixel detector modules. Unlike hybrids, detectors fabricated in HV-CMOS technologies implement readout electronics into the same substrate used for particle sensing. Detectors, therefore, require no costly additional assembly and, on top of this, can be very thin, decreasing multiple scattering experienced by traversing particles, for example. In recent years, HV-CMOS pixel detectors have demonstrated excellent radiation tolerance however, there is still room for improvement, as it is currently approximately one order of magnitude lower than that of hybrids. HV-CMOS pixel detectors therefore cannot entirely replace hybrids in the new generation of collider experiments as they are and consequently cannot be used for the inner layers of silicon trackers in future experiments where radiation tolerance requirements are even higher.One of the ways hybrid detectors mitigate radiation damage effects is by increasing the operating voltage, which is typically much higher than is currently possible with HV-CMOS detectors. Work in this thesis is aimed at increasing the breakdown voltage of HV-CMOS pixel detectors in an effort to increase their operating voltage and, therefore, their radiation tolerance. In this way, it might one day be possible to use the technology to produce particle tracking detectors that exhibit qualities attributed to both hybrid and HV-CMOS detectors: very thin, highly radiation tolerant detectors, with small pixels, and excellent time resolution, that are also relatively inexpensive to produce in very large quantities. In this thesis, a methodology for quickly and accurately recreating HV-CMOS pixels using Technology Computer-Aided Design (TCAD) simulations is presented. The resulting TCAD structures were used to aid in the design of the second prototype developed within the CERN RD50 collaboration, RD50-MPW2. Additionally, Edge Transient Cur- rent Technique (e-TCT) measurements of backside biased HV-CMOS pixel detectors are presented, which facilitated the development of a new HV-CMOS detector prototype UKRI-MPW0. The simulations and design of UKRI-MPW0 are presented, and measurements of fabricated samples demonstrate a breakdown voltage > 600 V. An irradiation campaign is underway, and a second prototype is planned for submission before the end of the year.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798371936776Subjects--Topical Terms:

2144759
High energy physics.
Index Terms--Genre/Form:

542853
Electronic books.

Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments.
LDR:04569nmm a2200385K 4500 001 2356175
005 20230612071836.5
006 m o d
007 cr mn ---uuuuu
008 241011s2022 xx obm 000 0 eng d
020 $a 9798371936776
035 $a (MiAaPQ)AAI30227471
035 $a (MiAaPQ)Liverpool_3165214
035 $a AAI30227471
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Franks, Matthew Lewis. $3 3696655
245 1 0 $a Design and Characterisation of High-Voltage CMOS (HV-CMOS) Detectors for Particle Physics Experiments.
264 0 $c 2022
300 $a 1 online resource (237 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-08, Section: A.
500 $a Advisor: Vilella-Figueras, Eva ; Massari, Nicola ; Vossebeld, Joost ; Wonsak, Sven.
502 $a Thesis (Ph.D.)--The University of Liverpool (United Kingdom), 2022.
504 $a Includes bibliographical references
520 $a As particle searches and physics requirements in high energy particle physics experiments become more sophisticated, particle tracking detectors that are more precise, accurate, and resilient must be developed while remaining cost-effective. One promising candidate for producing future silicon particle tracking detectors is High- Voltage Complementary Metal-Oxide-Semiconductor (HV-CMOS) technology. This technology is emerging within the particle physics community and has been selected for the Mu3e experiment and proposed for use in the upgraded LHCb experiment at the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Commercialised technologies such as HV-CMOS benefit from a relatively fast, low-cost manufacturing process when compared to bespoke techniques used in the production of the current state-of-the-art hybrid pixel detector modules. Unlike hybrids, detectors fabricated in HV-CMOS technologies implement readout electronics into the same substrate used for particle sensing. Detectors, therefore, require no costly additional assembly and, on top of this, can be very thin, decreasing multiple scattering experienced by traversing particles, for example. In recent years, HV-CMOS pixel detectors have demonstrated excellent radiation tolerance however, there is still room for improvement, as it is currently approximately one order of magnitude lower than that of hybrids. HV-CMOS pixel detectors therefore cannot entirely replace hybrids in the new generation of collider experiments as they are and consequently cannot be used for the inner layers of silicon trackers in future experiments where radiation tolerance requirements are even higher.One of the ways hybrid detectors mitigate radiation damage effects is by increasing the operating voltage, which is typically much higher than is currently possible with HV-CMOS detectors. Work in this thesis is aimed at increasing the breakdown voltage of HV-CMOS pixel detectors in an effort to increase their operating voltage and, therefore, their radiation tolerance. In this way, it might one day be possible to use the technology to produce particle tracking detectors that exhibit qualities attributed to both hybrid and HV-CMOS detectors: very thin, highly radiation tolerant detectors, with small pixels, and excellent time resolution, that are also relatively inexpensive to produce in very large quantities. In this thesis, a methodology for quickly and accurately recreating HV-CMOS pixels using Technology Computer-Aided Design (TCAD) simulations is presented. The resulting TCAD structures were used to aid in the design of the second prototype developed within the CERN RD50 collaboration, RD50-MPW2. Additionally, Edge Transient Cur- rent Technique (e-TCT) measurements of backside biased HV-CMOS pixel detectors are presented, which facilitated the development of a new HV-CMOS detector prototype UKRI-MPW0. The simulations and design of UKRI-MPW0 are presented, and measurements of fabricated samples demonstrate a breakdown voltage > 600 V. An irradiation campaign is underway, and a second prototype is planned for submission before the end of the year.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a High energy physics. $3 2144759
650 4 $a Semiconductors. $3 516162
650 4 $a Particle accelerators. $3 705332
650 4 $a Computer aided design--CAD. $3 3561162
650 4 $a Sensors. $3 3549539
650 4 $a Medical research. $2 bicssc $3 1556686
650 4 $a Silicon wafers. $3 3681738
650 4 $a CMOS. $3 3681646
650 4 $a Radiation. $3 673904
650 4 $a Particle physics. $3 3433269
650 4 $a Technology. $3 531676
650 4 $a Design. $3 518875
650 4 $a Electrical engineering. $3 649834
650 4 $a Energy. $3 876794
650 4 $a Industrial engineering. $3 526216
650 4 $a Physics. $3 516296
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0798
690 $a 0389
690 $a 0544
690 $a 0791
690 $a 0546
690 $a 0605
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a The University of Liverpool (United Kingdom). $3 1684840
773 0 $t Dissertations Abstracts International $g 84-08A.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30227471 $z click for full text (PQDT)