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InAsSb Barrier Heterostructures for Infrared Optoelectronics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	InAsSb Barrier Heterostructures for Infrared Optoelectronics./
作者:	Liu, Jinghe.
面頁冊數:	1 online resource (150 pages)
附註:	Source: Dissertations Abstracts International, Volume: 83-04, Section: B.
Contained By:	Dissertations Abstracts International83-04B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28717355click for full text (PQDT)
ISBN:	9798460455836

InAsSb Barrier Heterostructures for Infrared Optoelectronics.
Liu, Jinghe.

InAsSb Barrier Heterostructures for Infrared Optoelectronics. - 1 online resource (150 pages)

Source: Dissertations Abstracts International, Volume: 83-04, Section: B.

Thesis (Ph.D.)--State University of New York at Stony Brook, 2021.

Includes bibliographical references

InAsSb is a promising material for mid-wave to long-wave infrared optoelectronics. It has the lowest energy band gap among all III-V compounds. Development of Ga(Al)InSb/InAsSb/AlInGaAsSb barrier heterostructure has been studied for more than 10 years. This barrier heterostructure can effectively separate electrons and holes for unipolar carrier transport. Separation of two narrow bandgap regions by the wide bandgap barrier can reduce the generation-recombination current in the absorber, resulting in an Auger-limited dark current with the prospect of high temperature operation. Recent progress in this dissertation addresses the achievement of operation at the wavelength of 10 μm in barrier structures using strained layer superlattices (SLS), as well as the operation at 5-10 μm using bulk InAs1-xSbx with Sb composition in the range of 9% to 40%. The InAsSb barrier heterostructures have been demonstrated in photodetectors, beam steering devices and arrays with integrated multiplexing.In the design of barrier heterostructure for long-wave infrared detection, the type-II strained layer superlattices and bulk InAsSb as absorbers were proposed. Both have the energy band gap of λ = 10 μm. For SLS absorbers, a 4.3-nm short-period InAsSb0.3/InAsSb0.55 and a 10.9-nm long-period InAs/InAsSb0.36 were modeled by 8-band k ∙ p method. The quantum efficiency (QE), minority hole lifetime and vertical hole mobility were studied in the long-wave infrared nBn photodetector. The short-period SLS structure (SP) grown metamorphically demonstrated at least 2 times greater vertical hole mobility than that in long-period structure (LP) grown pseudomorphically at the temperature range of 77-150 K. The metamorphic growth was achieved by introducing linear graded buffer on top of GaSb substrate enabled greater average Sb composition and less strain in SLS thin layers compared to that grown pseudomorphically. Moreover, the minority hole lifetime of 555 ns was measured in SP structure at 77 K, which is a factor 2.5 times greater than the best minority hole lifetime reported previously for InAsSb grown on metamorphic buffers. Both greater vertical hole mobilities and longer lifetimes resulted in a 1.5 times greater quantum efficiency (QE) in SP structure at 77 K, increasing from 40 % to 63 %. Impact of valence band alignment and barrier doping on device performance were explored in bulk InAs0.6Sb0.4 absorbers by varying the barrier composition, absorber doping concentration and contact doping concentration. We summarized all the historically available data of InAsSb nBn photodetectors in our group. Then their performance was compared with that of state-of-the-art HgCdTe photodetectors under Rule07. Simulation results also indicated a new recommended valence band bowing parameter of 0.4 eV in InAsSb based on the energy band gap bowing of 0.87 eV.Free-space beam intensity modulation was realized in the nBp heterostructure with the modulation depth of 8-9 % based on single-pass transmission. The idea was demonstrated with a InAsSb0.42 and a Type-2 SLS InAsSb0.35/InAsSb0.65 active region in the barrier heterostructures. The data of modulation depths were in good agreement with the transmittance modeling results in both cases. The estimated quasi Fermi level rise was 20 meV and the electrically injected excess carrier concentration above Ec was (1-2) x 1016 cm-3 according to the measured modulation of transmission spectra. The dependences of the excess carrier concentration on injected current were used in the fitting of the temperature-dependent Auger coefficients for the recombination process involving two electrons and heavy hole with energy transfer to another electron (CHCC). Significant refractive index changes of 0.05-0.06 were derived by manipulating the fundamental absorption edge based on Kramers-Kronig relations. This number is orders of magnitude greater than the change of refractive index which can be realized in high electric field in conventional EO materials. An insight on the application of beam steering device was discussed, including optical phased arrays and grating couplers. A vertical steering angle of 4.5° by modulation of the refractive index at the outcoupled angle of 45° was demonstrated in the grating coupler by simulation.The arrays of optical modulators for laser beam intensity modulation with high spatial resolution (beam shaping) have been proposed. To mitigate the large number of contacts in the addressable array of optical modulators, an integrated double barrier heterostructure for current multiplexing was proposed using InAs0.91Sb0.09 with a lattice matched growth on GaSb substrate. The double barrier heterostructure incorporated the control gate layer capable to control the injection current in a pixel of the selected row and column of the 2D array of the modulators with high current gain and high on/off current ratio. The current gain of 2,580, the control current of 10-6 A and the on/off current ratio of 5,600 were simultaneously achieved at T = 200 K. The active region current density of Ja = 1.66 x 103 A/cm2 was demonstrated. The modeling showed that of the double barrier heterostructure is capable of current addressing in the arrays with 1,000 x 1,000 pixels.A R&D project is underway at Brookhaven National Laboratory and Stony Brook University to demonstrate the first soft X-ray beam position monitor (SXBPM) based on GaAs photodiode array technology. The SXBPMs should provide micron-scale positional resolution, operate in ultrahigh vacuum and place in the beam halo to preserve beam coherence. Photodiode arrays with a shallow pn junction have been designed and extensively simulated. The first detector array prototypes with up to 64 pixels have been fabricated and characterized with Ar-ion laser. Eight arrays have been packaged in ceramic and shipped to BNL to be tested in soft X-ray beam at CSX end-station. Due to the geometrical constraints from the upstream of the SXBPM location, the detectors installed on the movable arms must be placed inside the FOE fixed mask but outside the slit aperture. Beside the traditional difference-over-sum method, new algorithms for beam position calculation are under development to take full advantage of extended multi-pixel arrays.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798460455836Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

InfraredIndex Terms--Genre/Form:

542853
Electronic books.

InAsSb Barrier Heterostructures for Infrared Optoelectronics.
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504 $a Includes bibliographical references
520 $a InAsSb is a promising material for mid-wave to long-wave infrared optoelectronics. It has the lowest energy band gap among all III-V compounds. Development of Ga(Al)InSb/InAsSb/AlInGaAsSb barrier heterostructure has been studied for more than 10 years. This barrier heterostructure can effectively separate electrons and holes for unipolar carrier transport. Separation of two narrow bandgap regions by the wide bandgap barrier can reduce the generation-recombination current in the absorber, resulting in an Auger-limited dark current with the prospect of high temperature operation. Recent progress in this dissertation addresses the achievement of operation at the wavelength of 10 μm in barrier structures using strained layer superlattices (SLS), as well as the operation at 5-10 μm using bulk InAs1-xSbx with Sb composition in the range of 9% to 40%. The InAsSb barrier heterostructures have been demonstrated in photodetectors, beam steering devices and arrays with integrated multiplexing.In the design of barrier heterostructure for long-wave infrared detection, the type-II strained layer superlattices and bulk InAsSb as absorbers were proposed. Both have the energy band gap of λ = 10 μm. For SLS absorbers, a 4.3-nm short-period InAsSb0.3/InAsSb0.55 and a 10.9-nm long-period InAs/InAsSb0.36 were modeled by 8-band k ∙ p method. The quantum efficiency (QE), minority hole lifetime and vertical hole mobility were studied in the long-wave infrared nBn photodetector. The short-period SLS structure (SP) grown metamorphically demonstrated at least 2 times greater vertical hole mobility than that in long-period structure (LP) grown pseudomorphically at the temperature range of 77-150 K. The metamorphic growth was achieved by introducing linear graded buffer on top of GaSb substrate enabled greater average Sb composition and less strain in SLS thin layers compared to that grown pseudomorphically. Moreover, the minority hole lifetime of 555 ns was measured in SP structure at 77 K, which is a factor 2.5 times greater than the best minority hole lifetime reported previously for InAsSb grown on metamorphic buffers. Both greater vertical hole mobilities and longer lifetimes resulted in a 1.5 times greater quantum efficiency (QE) in SP structure at 77 K, increasing from 40 % to 63 %. Impact of valence band alignment and barrier doping on device performance were explored in bulk InAs0.6Sb0.4 absorbers by varying the barrier composition, absorber doping concentration and contact doping concentration. We summarized all the historically available data of InAsSb nBn photodetectors in our group. Then their performance was compared with that of state-of-the-art HgCdTe photodetectors under Rule07. Simulation results also indicated a new recommended valence band bowing parameter of 0.4 eV in InAsSb based on the energy band gap bowing of 0.87 eV.Free-space beam intensity modulation was realized in the nBp heterostructure with the modulation depth of 8-9 % based on single-pass transmission. The idea was demonstrated with a InAsSb0.42 and a Type-2 SLS InAsSb0.35/InAsSb0.65 active region in the barrier heterostructures. The data of modulation depths were in good agreement with the transmittance modeling results in both cases. The estimated quasi Fermi level rise was 20 meV and the electrically injected excess carrier concentration above Ec was (1-2) x 1016 cm-3 according to the measured modulation of transmission spectra. The dependences of the excess carrier concentration on injected current were used in the fitting of the temperature-dependent Auger coefficients for the recombination process involving two electrons and heavy hole with energy transfer to another electron (CHCC). Significant refractive index changes of 0.05-0.06 were derived by manipulating the fundamental absorption edge based on Kramers-Kronig relations. This number is orders of magnitude greater than the change of refractive index which can be realized in high electric field in conventional EO materials. An insight on the application of beam steering device was discussed, including optical phased arrays and grating couplers. A vertical steering angle of 4.5° by modulation of the refractive index at the outcoupled angle of 45° was demonstrated in the grating coupler by simulation.The arrays of optical modulators for laser beam intensity modulation with high spatial resolution (beam shaping) have been proposed. To mitigate the large number of contacts in the addressable array of optical modulators, an integrated double barrier heterostructure for current multiplexing was proposed using InAs0.91Sb0.09 with a lattice matched growth on GaSb substrate. The double barrier heterostructure incorporated the control gate layer capable to control the injection current in a pixel of the selected row and column of the 2D array of the modulators with high current gain and high on/off current ratio. The current gain of 2,580, the control current of 10-6 A and the on/off current ratio of 5,600 were simultaneously achieved at T = 200 K. The active region current density of Ja = 1.66 x 103 A/cm2 was demonstrated. The modeling showed that of the double barrier heterostructure is capable of current addressing in the arrays with 1,000 x 1,000 pixels.A R&D project is underway at Brookhaven National Laboratory and Stony Brook University to demonstrate the first soft X-ray beam position monitor (SXBPM) based on GaAs photodiode array technology. The SXBPMs should provide micron-scale positional resolution, operate in ultrahigh vacuum and place in the beam halo to preserve beam coherence. Photodiode arrays with a shallow pn junction have been designed and extensively simulated. The first detector array prototypes with up to 64 pixels have been fabricated and characterized with Ar-ion laser. Eight arrays have been packaged in ceramic and shipped to BNL to be tested in soft X-ray beam at CSX end-station. Due to the geometrical constraints from the upstream of the SXBPM location, the detectors installed on the movable arms must be placed inside the FOE fixed mask but outside the slit aperture. Beside the traditional difference-over-sum method, new algorithms for beam position calculation are under development to take full advantage of extended multi-pixel arrays.
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